Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-24T00:38:05.862Z Has data issue: false hasContentIssue false
  • English
  • Français

A New Computationally-Efficient Two-Dimensional Model for Boron Implantation Into Single-Crystal Silicon

Published online by Cambridge University Press:  28 February 2011

K. M. Klein ,
C. Park ,
S. Yang ,
S. Morris ,
V. Do  and
A. F. Tasch
K. M. Klein
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78712
C. Park
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78712
S. Yang
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78712
S. Morris
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78712
V. Do
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78712
A. F. Tasch
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78712
Get access

Abstract

We have developed a new computationally-efficient two-dimensional model for boron implantation into single-crystal silicon. This new model is based on the dual Pearson semi-empirical implant depth profile model [1] and the UT-MARLOWE Monte Carlo boron ion implantation model [2]. This new model can predict with very high computatational efficiency two-dimensional as-implanted boron profiles as a function of energy, dose, tilt angle, rotation angle, masking edge orientation, and masking edge thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 217
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] . Tasch, A. F., Shin, H., Park, C., Alvis, J., and Novak, S., J. Electrochem. Soc., 136, 810 (1989).Google Scholar
[2] . Klein, K. M., Park, C., and Tasch, A. F., IEEE IEDM Tech. Dig., 30–5, 745 (1990).Google Scholar
[3] . Klein, K. M., Park, C., Tasch, A. F., Simonton, R. B., and Novak, S., J. Electrochem. Soc., 138, 2102 (1991).Google Scholar
[4] . Law, M. and Dutton, R. W., IEEE Trans. CAD, 7 181 (1988).Google Scholar