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New DLTS Peaks Associated with New Donors and Rodlike Defects in Czochralski Silicon

Published online by Cambridge University Press:  25 February 2011

Yoichi Kamiura ,
Fumio Hashimoto  and
Minoru Yoneta
Yoichi Kamiura
Affiliation:
Faculty of Engineering, Okayama University, Okayama 700, Japan
Fumio Hashimoto
Affiliation:
Faculty of Engineering, Okayama University, Okayama 700, Japan
Minoru Yoneta
Affiliation:
Faculty of Engineering, Okayama University, Okayama 700, Japan
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Abstract

We have studied the effects of low-temperature preannealing and carbon on new donor formation at 650°C in phosphorus-doped Czochralski (CZ) silicon by deep-level transient spectroscopy (DLTS). In not preannealed carbon-lean samples, only a weak continuous DLTS spectrum often reported so far was observed. The intensity of this broad feature became significantly stronger in not preannealed carbon-rich samples. On the contrary, preannealed samples showed no such continuous spectra but two new DLTS peaks arising from shallow donor levels. Carbon enhanced the low-temperature peak, but retarded the high-temperature one. The latter peak is in strong correlation with the rodlike defect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 291
Copyright
Copyright © Materials Research Society 1990

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