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New Growth Chemistries and Techniques in Metal-Organic Vapor Phase Epitaxy

Published online by Cambridge University Press:  26 February 2011

T. F. Kuech
T. F. Kuech*
Affiliation:
IBMT. J. Watson Research Center, P.O.Box 218, Yorktown Heights, NY, 10598
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Abstract

The metal-organic vapor phase epitaxy (MOVPE) technique is perhaps themost versatile of the conventional III–V growth epitaxial systems. This versatility stems from the wide variety of chemical precursors available for the growth and doping of the films. Two examples of this versatility, carbon doping and selective epitaxy, are presented. Future progress within this technology will continue to be driven by the development of new chemistries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 41
Copyright
Copyright © Materials Research Society 1989

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References

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