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A New Kinetic Model for The Nucleation and Growth of Self-Interstitial Clusters in Silicon

Published online by Cambridge University Press:  21 March 2011

Christophe J. Ortiz  and
Daniel Mathiot
Christophe J. Ortiz
Affiliation:
DIMES / ECTM Laboratory, TU Delft, Mekelweg 4, 2628 CD Delft, The Netherlands
Daniel Mathiot
Affiliation:
Laboratoire PHASE-CNRS, 23 rue du Loess, 67037 Strasbourg Cedex 2, France
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Abstract

A model for nucleation and growth of {311} defects is proposed on the basis of thermodynamic and kinetic considerations. Simulated results are discussed and compared to experimental results found in the literature. According to our model it is found that formation energies of self-interstitial clusters depends on the local interstitial supersaturation. Physical parameters extracted from experimental results by inverse modeling are in good agreement with recent values published in the literature.

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References

REFERENCES

[1] Cristiano, F., Grisolia, J., Colombeau, B., Omri, M., Mauduit, B. de, Claverie, A., Giles, L. F. and Cowern, N. E. B., J. Appl. Phys. 87 (12), 8420 (2000)Google Scholar
[2] Eaglesham, D. J., Stolk, P. A., Gossmann, H.-J. and Poate, J. M., Appl. Phys. Let. 65 (18), 2305 (1994)Google Scholar
[3] Cowern, N. E. B., Mannino, G., Stolk, P. A., Roozeboom, F., Huizing, H. G. A., Berkum, J. G. M van, Cristiano, F., Claverie, A. and Jaraiz, M., Phys. Rev. Lett. 82 (22), 4460 (1999).Google Scholar
[4] Gencer, A. H. and Dunham, S. T., J. Appl. Phys. 81 (2), 631 (1997)Google Scholar
[5] Hobler, G. and Rafferty, C. S., MRS Symp.Proc. 568, 123 (1999)Google Scholar
[6] Lim, D. R., Rafferty, C.S. and Clemens, F. P., Appl. Phys. Lett. 67, 2303 (1995)Google Scholar
[7] Stolk, P. A., Gossmann, H.-J., Eaglesham, D.J., Jacobson, D. C., Rafferty, C.S, Gilmer, G. H, Jaraiz, M., Poate, J. M., Luftman, H. S. and Haynes, T. E., J. Appl. Phys. 81, 6031 (1997)Google Scholar
[8] Pichler, P., Jungling, W., Selberherr, S., Guerrero, E. and Pötzl, H. W., IEEE Trans. Computer-Aided Design 4 (1985) 384.Google Scholar
[9] Ouwerling, G. L., Profile, The General Purpose Data Processor by Ouwerling, Gertjan L., Electrical Materials Laboratory, Delft University, 1988.Google Scholar
[10] Bracht, H., Stolwijk, N. A. and Mehrer, H., Phys. Rev. B 52 (23), 16542 (1995)Google Scholar
[11] Robertson, L. S., Jones, K. S., Rubin, L. M. and Jackson, J., J. Appl. Phys. 87 (6), 2910 (2000)Google Scholar