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A New Method for Measuring Ion Implantation Amorphous Dose In Situ

Published online by Cambridge University Press:  28 February 2011

Jianzhong Yuan ,
Igor V. Verner  and
James W. Corbett
Jianzhong Yuan
Affiliation:
The Institute for the Study of Defects in Solids, Department of Physics, State University of New York at Albany, Albany, NY 12222, USA
Igor V. Verner
Affiliation:
The Institute for the Study of Defects in Solids, Department of Physics, State University of New York at Albany, Albany, NY 12222, USA
James W. Corbett
Affiliation:
The Institute for the Study of Defects in Solids, Department of Physics, State University of New York at Albany, Albany, NY 12222, USA
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Abstract

An in situ method for determining the ion implantation dose necessary to make Si amorphous is developed and utilized. This method is based on measuring ion-implantation-induced in-plane stress. Measurements are carried out for various low energy ions implanted into thin p-type (100) Si. The doses necessary to make Si amorphous obtained by this method are in good agreement with previous data. This technique is sensitive, informative, quick, visual and nondestructive.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 45
Copyright
Copyright © Materials Research Society 1992

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