Hostname: page-component-848d4c4894-2pzkn Total loading time: 0 Render date: 2024-06-06T17:15:18.674Z Has data issue: false hasContentIssue false
  • English
  • Français

A New Offset Gated Poly-Si TFT Using a Wet Oxidation

Published online by Cambridge University Press:  15 February 2011

B.H. Min ,
J.M. Oh  and
M.K. Han
B.H. Min
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56–1, Shinrim-dong, Kwanak-ku, Seoul 151–742, Korea
J.M. Oh
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56–1, Shinrim-dong, Kwanak-ku, Seoul 151–742, Korea
M.K. Han
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56–1, Shinrim-dong, Kwanak-ku, Seoul 151–742, Korea
Get access

Abstract

Several off-set gated TFTs have been proposed to reduce the off current. However, those structures may require an additional mask and photolithography process step. We propose a novel off-set gated poly-Si TFT which reduces the off current considerably without any additional mask.

We have simulated the device characteristics by a numerical simulator in order to verify the proposed TFT. The simulation results show that the off current of the new device has been reduced to 0.ipA. The reduction of on current is much less than the off current reduction and the on/off current ratios exceeding 107 have been accomplished.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 345: Symposium M – Flat Panel Display Materials , 1994 , 141
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Clark, M.G., IEE Proc. -Circuit Devices Syst., 141, 3 (1994)Google Scholar
[2] Fossum, J.G., Oritz, A., Shichijo, H. and Baneriee, S.K., IEEE Tras. on Electron Devices, 32, 1878 (1985)Google Scholar
[3] Malhi, S.D.S., Electron Lett., 19, 993 (1983)Google Scholar
[4] Kim, Y.S., Choi, K.Y., Lee, S.K., Min, B.H. and Han, M.K., Jpn. J. Appl. Phys. 33, 649 (1994)Google Scholar
[5] Seki, S., IEEE Electron Device Lett., 8, 434 (1987)Google Scholar
[6] Kobayashi, K., Murai, H., Sakamoto, T. and Baert, K., Jpn. J. Appl. Phys., 32,469 (1993)Google Scholar