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New Pt/(Bi,La)4Ti3O12/Si3N4/Si MFIS Structure for FET-Type Ferroelectric Memories by the Sol-Gel Method

Published online by Cambridge University Press:  21 March 2011

Takeshi Kijima ,
Yoshihisa Fujisaki  and
Hiroshi Ishiwara
Takeshi Kijima
Affiliation:
Frontier Collaborative Research Center Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Yoshihisa Fujisaki
Affiliation:
Frontier Collaborative Research Center Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Hiroshi Ishiwara
Affiliation:
Frontier Collaborative Research Center Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Abstract

The well c-axis-oriented Bi3.25La0.75Ti3O12 films with good crystallinity and good surface morphology were obtained at temperatures higher than 600°C It was also found in a Pt / 100nm-Bi3.25La0.75Ti3O12 / 3nm-Si3N4 / Si ( metal / ferroelectric / insulator / semiconductor ) structure that C-V characteristics showed a hysteresis loop with a memory window of about 1V and both the high and low capacitance values kept at zero bias voltage did not change for more than 3 hours.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC3.6.1
Copyright
Copyright © Materials Research Society 2001

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References

1. Moll, J. L. and Tarui, Y.: IEEE Trans. Elect. dev. ED–10(1963)338 Google Scholar
2. Wu, S. Y.: Ferroelectrics 11 (1976) 379.Google Scholar
3. Matsui, Y., Okuyama, M., Noda, M. and Hamakawa, Y.: Appl. Phys. A 28 (1982) 161.Google Scholar
4. Lampe, D. R., Adams, D. A., Austin, M., Polinsky, M., Dzimianski, J., Sinhaloy, S., Buhay, H., Brabant, P. and Liu, Y. M.: Ferroelectrics 133 (1992) 61.Google Scholar
5. Yoon, S. M., Tokumitsu, E. and Ishiwara, H.: Jpn. J. Appl. Phys., 39 (2000)2119.Google Scholar
6. Park, B. H., Kang, B. S., Bu, S. D., Noh, T. W., Lee, J. and Jo, W., Nature 401(1999)682.Google Scholar
7. Fujisaki, Y. and Ishiwara, H.: submitted to Jpn. J. Appl. Phys.Google Scholar
8. Kijima, T. and Matsunaga, H., Jpn. J. Appl. Phys., 38(1999)2281.Google Scholar