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A New p-Type Conductive Oxide with Wide Band GAP, SrCu2O2

Published online by Cambridge University Press:  15 February 2011

A. Kudo ,
H. Yanagi ,
H. Hosono  and
H. Kawazoe
A. Kudo
Affiliation:
Materials & Structures Laboratory, Tokyo Institute of Technology4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan, kawazoe1@rlem.titech.ac.jp
H. Yanagi
Affiliation:
Materials & Structures Laboratory, Tokyo Institute of Technology4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan, kawazoe1@rlem.titech.ac.jp
H. Hosono
Affiliation:
Materials & Structures Laboratory, Tokyo Institute of Technology4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan, kawazoe1@rlem.titech.ac.jp
H. Kawazoe
Affiliation:
Materials & Structures Laboratory, Tokyo Institute of Technology4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan, kawazoe1@rlem.titech.ac.jp
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Abstract

SrCu2O2 thin films were prepared onto SiO2 glass substrates by pulsed laser deposition. The film deposited in O2 atmosphere of 7×10-4 Pa at 573 K showed high optical transmission in visible and near infrared regions. The optical band gap of the film was estimated to be -3.3 eV. The dc electrical conductivity of the film was 3.8 × 10-3 Scm-1. Potassium was used for substitutional hole-doping. The dc electrical conductivity of the K-doped film at 300 K increased to 4.8 × 10-2 Scm-1. Positive sign of Seebeck and Hall coefficients demonstrated p-type conduction of the K-doped film. Hole concentration and mobility at 300 K were 6.1 × 1017 cm-3 and 0.46 cm2V-1s-1, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 526: Symposium Y – Advances in Laser Ablation of Materials , 1998 , 299
Copyright
Copyright © Materials Research Society 1998

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