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Noise Sources in Polycrystalline Silicon Thin-Film Transistors

Published online by Cambridge University Press:  11 February 2011

Il Ki Han ,
Young Ju Park ,
Woon Jo Cho ,
Won Jun Choi ,
Jungil Lee ,
Alain Chovet  and
Jean Brini
Il Ki Han
Affiliation:
Nano Devices research center, Korea Institute of Science and technology, Seoul, 130650, Korea
Young Ju Park
Affiliation:
Nano Devices research center, Korea Institute of Science and technology, Seoul, 130650, Korea
Woon Jo Cho
Affiliation:
Nano Devices research center, Korea Institute of Science and technology, Seoul, 130650, Korea
Won Jun Choi
Affiliation:
Nano Devices research center, Korea Institute of Science and technology, Seoul, 130650, Korea
Jungil Lee
Affiliation:
Nano Devices research center, Korea Institute of Science and technology, Seoul, 130650, Korea
Alain Chovet
Affiliation:
IMEP, INPG/CNRS, Grenoble, 38016, France
Jean Brini
Affiliation:
IMEP, INPG/CNRS, Grenoble, 38016, France
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Abstract

Sources for low frequency noise in polycrystalline silicon thin-film transistors are analytically investigated. The grain boundary is modeled as symmetric Schottky barrier and a new device equation for current conduction in thin-film transistors is presented. At lower currents where barrier height is large enough to provide necessary distribution of time constants for 1/f noise, the number fluctuation via barrier height modulation at the grain boundary is found to be the main noise generation mechanism. At higher currents, mobility and diffusivity fluctuation are found to be dominant

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M8.18
Copyright
Copyright © Materials Research Society 2003

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References

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