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Noncontact Photoconductivity Amplitude Technique to Characterize Polishing- and Slicing-Induced Residual Damage in Si Wafers

Published online by Cambridge University Press:  26 February 2011

Y. Ogita ,
M. Nakano  and
H. Masumura
Y. Ogita
Affiliation:
Kanagawa Institute of Technology, Department of Electrical and Electronic Engineering, Atsugi, Kanagawa, 243–02, Japan
M. Nakano
Affiliation:
Shin-Etsu Handotai Co., Ltd., Shirakawa Lab., Nishi-shirakawa, Fukushima 961, Japan
H. Masumura
Affiliation:
Shin-Etsu Handotai Co., Ltd., Shirakawa Lab., Nishi-shirakawa, Fukushima 961, Japan
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Abstract

The photoconductivity amplitude (PCA) technique with UV laser carrier excitation has been proposed to characterize surface property and subsurface damage. Combining this new technique with mechanochemical polishing has determined the depth profile of the slicing-induced residual damage. Combining SC1 cleaning with this technique allows to determine the depth profile of residual damage induced by mirror polishing. This result leads that the mirror polishing-induced damage can be removed by the SC1 cleaning.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 591
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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