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Nondestructive Characterization of ZnSe/GaAs Heterostructure Using Transverse Acoustoelectric Voltage Spectroscopy

Published online by Cambridge University Press:  21 February 2011

K. J. Han ,
A. Abbate ,
I. B. Bhat ,
S. Akram  and
P. Das
K. J. Han
Affiliation:
Electrical, Computer and Systems Engineering Department Rensselaer Polytechnic Institute, Troy, NY 12180-3590
A. Abbate
Affiliation:
Benet Labs, SMCAR-CCB-RA, Watervliet Arsenal, Watervliet, NY 12189
I. B. Bhat
Affiliation:
Electrical, Computer and Systems Engineering Department Rensselaer Polytechnic Institute, Troy, NY 12180-3590
S. Akram
Affiliation:
Electrical, Computer and Systems Engineering Department Rensselaer Polytechnic Institute, Troy, NY 12180-3590
P. Das
Affiliation:
Electrical, Computer and Systems Engineering Department Rensselaer Polytechnic Institute, Troy, NY 12180-3590
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Abstract

The electrical and optical properties of the heterostructure interface between high resistivity ZnSe and the semi-insulating GaAs substrate have been investigated using Transverse Acoustoelectric Voltage (TAV) spectroscopy. From the TAV spectra and the relative change of the TAV amplitude (ΔTAV/TAV), we have found the carrier type and concentration of ZnSe as well as the energy levels of various trap states at the heterostructure interface. The spectral behavior of the ΔTAV/TAV curves varied for samples of different ZnSe epilayer thickness. From the measurements, the surface recombination velocities (SRV's) were calculated. For the pseudomorphic ZnSe films on GaAs, a reduction in the SRV's was measured. As the thickness of the ZnSe film was increased, the various ΔTAV/TAV indicated presence of a large number of interface states due to the introduction of misfit dislocations.

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References

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