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Non-Destructive Measurement of Deep Embedded Defects in Silicon using Photoacoustic Microscope (PAM)

Published online by Cambridge University Press:  01 February 2011

Lu Xu ,
Donnacha Lowney ,
Patrick J McNally ,
Eva Gomez Fernandez  and
Jennifer Stopford
Lu Xu
Affiliation:
xulu@eeng.dcu.ie, Dublin City University, School of Electronic Engineering, Ballymun Road, Dublin, Dublin 9, Ireland, +353-1-700-5885, +353-1-700-5508
Donnacha Lowney
Affiliation:
lowneyd@eeng.dcu.ie, Dublin City University, School of Electronic Engineering, Ballymun Road, Dublin, N/A, Dublin 9, Ireland
Patrick J McNally
Affiliation:
Patrick.McNally@dcu.ie, Dublin City University, School of Electronic Engineering,, Ballymun Road, Dublin, N/A, Dublin 9, Ireland
Eva Gomez Fernandez
Affiliation:
egomezfernandes@xsil.com, Dublin City University, School of Electronic Engineering, Ballymun Road, Dublin, N/A, Dublin 9, Ireland
Jennifer Stopford
Affiliation:
jstopford@xsil.com, Dublin City University, School of Electronic Engineering, Ballymun Road, Dublin, N/A, Dublin 9, Ireland
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Abstract

An automatic gas cell photoacoustic microscope has been used to characterize two laser machined air trenches in a silicon substrate from the back side. Both amplitude and phase images reveal the subsurface features. The frequency dependence of the photoacoustic signals with different laser spot sizes was compared with a 1-D model. The effect of lateral heat diffusion on subsurface defect characterization was investigated and the results can be applied to other photothermal techniques.

Keywords

layeredthermal conductivitylaser ablation

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References

references

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