1.Nelson, F.J., Kamineni, V.K., Zhang, T., Comfort, E.S., Lee, J.U., and Diebold, A.C., Appl. Phys. Lett. 97, 253110 (2010).
2.Blake, P., Brimicombe, P.D., Nair, R.R., Booth, T.J., Jiang, D., Schedin, F., Ponomarenko, L.A., Morozov, S.V., Gleeson, H.F., Hill, E.W., Geim, A.K., and Novoselov, K.S., Nano Letters 8, 1704 (2008).
3.Liu, H., Liu, Y., and Zhu, D., J. Mater. Chem. 21, 3335 (2011).
4.Jo, G., Na, S., Oh, S., Lee, S., Kim, T., Wang, G., Choe, M., Park, W., Yoon, J., Kim, D., Kahng, Y.H., and Lee, T., Appl. Phys. Lett. 97, 213301 (2010).
5.Hibino, H., Kageshima, H., Kotsugi, M., Maeda, F., Guo, F.-Z., and Watanabe, Y., Phys. Rev. B 79, 125437 (2009)
6.Li, X., Zhu, H., Wang, K., Cao, A., Wei, J., Li, C., Jia, Y., Li, Z., Li, X., and Wu, D., . 22, 25 pp. 2743–2748 (2010)
7.Shambayati, S., Lin, D.Y.T, Servati, P., and Pulfrey, D.L., , 2011.
8.Du, Xu, Skachko, Ivan, Barker, Anthony and Andrei, Eva Y., Nature Nanotechnology 3, 491–495 (2008)
9.Tongay, S., Schumann, T., and Hebard, A. F., Appl. Phys. Lett. 95, 222103 (2009).
10.Sze, S. M. and Ng, K. K., Physics of Semiconductor Devices, 3rd ed. (Wiley New Jersey, 2007) p.136
11.Pulfrey, D.L., Understanding Modern Transistors and Diodes. (Cambridge University Press, 2010) pp. 103–117
12.Kumar, A., Sista, S., and Yang, Y., J. Appl. Phys. 105, 094512 (2009)
13.Tress, W., Petrich, A., Hummert, M., Hein, M., Leo, K., and Riede, M., Appl. Phys. Lett. 98, 063301 (2011)
14.Wang, T.H., Iwaniczko, E., Page, M.R., Wang, Q., Xu, Y., Yan, Y., Levi, D., Roybal, L., Bauer, R., and Branz, H.M., , 2, pp. 1439–1442 (2006)
15.Card, H. C. and Rhoderick, E. H., J. Phys. D: Appl. Phys. 4, 1589 (1971)
16.Brötzmann, M., Vetter, U., and Hofsäss, H., J. Appl. Phys. 106, 063704 (2009)