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A Novel Gap Narrowing Process for Creating High Aspect Ratio Transduction Gaps for MEM HF Resonators

Published online by Cambridge University Press:  01 February 2011

Steve Stoffels
Affiliation:
stoffels@imec.be, IMEC, United States
George Bryce
Affiliation:
bryce@imec.be, IMEC, Leuven, Belgium
Rita Van Hoof
Affiliation:
Rita.VanHoof@imec.be, IMEC, Leuven, Belgium
Bert Du Bois
Affiliation:
Bert.DuBois@imec.be, IMEC, Leuven, Belgium
Robert Mertens
Affiliation:
Robert.Mertens@imec.be, IMEC, Leuven, Belgium
Robert Puers
Affiliation:
puers@esat.kuleuven.be, KULeuven, ESAT, Leuven, Belgium
Harrie A.C. Tilmans
Affiliation:
Harrie.Tilmans@imec.be, IMEC, Leuven, Belgium
Ann Witvrouw
Affiliation:
Ann.Witvrouw@imec.be, IMEC, Leuven, Belgium
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Abstract

In this work a novel technique to create nanometer sized air gaps for high frequency (HF) mechanical resonators will be presented. The technique is based on the narrowing of initially wide gaps with a conformal “narrowing” layer. The novelty of this technique is that it enables the creation of narrow high-aspect ratio gaps (e.g. 100nm gaps in 10μm thick layers) without the need for complex lithography or high aspect ratio etching. Furthermore, the electrodes and the resonator itself can be patterned in a single processing step. The process methodology will be explained and validation experiments in a silicon-germanium (SiGe) based technology will be shown. This technology uses low temperature (∼450°C) poly silicon-germanium (SiGe) as the structural layer, which can be processed above CMOS, and therefore allows the fabrication of MEM devices above CMOS.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

[1] Nguyen, C.T.C., IEEE trans.Ultrason., Ferroelect., Freq.Contr., vol. 54, no. 2, pp. 251270, Feb. 2007 Google Scholar
[2] Tilmans, H.A.C., J.of Micromechanics and Microengineering, Vol.7, pp. 285309, 1997 Google Scholar
[3] Clark, J. R., Hsu, W.-T., and Nguyen, C. T.-C., Technical Digest, IEEE IEDM, Dec. 11–13, 2000, pp. 399402.Google Scholar
[4] Pourkamali, S., Ayazi, F., Technical Digest, MEMS 2004, pp. 813816 Google Scholar
[5] Franke, A. E., et.al., IEEE/ASME Journal of MEMS, 12, 160171 (2003).Google Scholar
[6] Schreurle, A., et.al., Proc.IEEE MEMS 07, pp. 3942.Google Scholar
[7] Lin, H.C., et.al, J. Electrochem. Soc., vol. 141 No. 9 (09/1994), pp. 25592563.Google Scholar
[8] Sedky, S., Proc.MRS, Vol 729 (2002), pp. 205213 Google Scholar
[9] Laermer, F., Schilp, A., Funk, K., Offenberg, M., Technical Digest MEMS′99, pp. 211216, Florida, USA, 1999.Google Scholar