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A Novel Iridium Precursor for MOCVD

Published online by Cambridge University Press:  01 February 2011

Kazuhisa Kawano
Affiliation:
Tokyo Research Laboratory, TOSOH Corporation, Hayakawa 2743–1, Ayase, Kanagawa 252–1123 Japan
Mayumi Takamori
Affiliation:
Sagami Chemical Research Center, Hayakawa 2743–1, Ayase, Kanagawa 252–1193 Japan
Tetsu Yamakawa
Affiliation:
Sagami Chemical Research Center, Hayakawa 2743–1, Ayase, Kanagawa 252–1193 Japan
Soichi Watari
Affiliation:
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Himeji Institute of Technology, Shosha 2167, Himeji, Hyogo 671–2201, Japan
Hironori Fujisawa
Affiliation:
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Himeji Institute of Technology, Shosha 2167, Himeji, Hyogo 671–2201, Japan
Masaru Shimizu
Affiliation:
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Himeji Institute of Technology, Shosha 2167, Himeji, Hyogo 671–2201, Japan
Hirohiko Niu
Affiliation:
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Himeji Institute of Technology, Shosha 2167, Himeji, Hyogo 671–2201, Japan
Noriaki Oshima
Affiliation:
Tokyo Research Laboratory, TOSOH Corporation, Hayakawa 2743–1, Ayase, Kanagawa 252–1123 Japan
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Abstract

A novel liquid iridium precursor (1,3-cyclohexadiene)(ethylcyclopentadienyl)iridium, Ir(EtCp)(CHD), was synthesized and its physical properties were examined. Ir(EtCp)(CHD) exhibited enough vapor pressure (0.1 Torr/75°C), excellent volatility and adequate decomposition temperature. Characteristics of the Ir films deposited using Ir(EtCp)(CHD) and the conventional Ir precursor (1,5-cyclooctadiene)(ethylcyclopentadienyl)iridium, Ir(EtCp)(COD), by metal-organic chemical vapor deposition (MOCVD) method were compared. Ir films grown using Ir(EtCp)(CHD) showed shorter incubation time and higher nucleation density than those of films using Ir(EtCp)(COD).

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCE

(1) Hoke, J.B., Stern, E.W. and Murry, H.M., J. Mater. Chem., 1, 551(1991).Google Scholar
(2) Dey, S.K., Goswami, J., Wang, C-G. and Majhi, P., Jpn. J. Appl. Phys., 38, L1052 (1999).Google Scholar
(3) Sun, Y.-M., Yan, X.-M., Mettlach, N., Endle, J.P., Kirch, P.D., Ekerdt, J.G., Madhukar, S., Hance, R.L. and White, L.M., J. Vac. Sci. Technol., A18, 10(2000).Google Scholar
(4) N, , Gelfond, V., Tuzikov, F.V. and Igumenov, I.K., Thin Solid Films, 227, 144(1993).Google Scholar
(5) Vergas, R., Goto, T., Zhang, W. and Hirai, T., Appl. Phys. Lett., 65, 1094 (1994).Google Scholar
(6) Sun, Y.-M., Endle, J.P., Smith, K., Whaley, S., Mahaffy, R., Ekerdt, J.G., White, J.M. and Hance, R.L., Thin Solid Films, 346, 100(1999).Google Scholar
(7) Gerfin, T., Halg, W.J., Atamny, F. and Dahmen, K., Thin Solid Films, 241, 352(1993).Google Scholar
(8) Xu, C., Dimeo, F. Jr, Baum, T.H. and Russel, M., Mat. Res. Soc. Symp. Proc., 541, 129 (1999).Google Scholar
(9) Shimizu, M., Kita, K., Fujisawa, H. and Niu, H., Mat. Res. Soc. Symp. Proc., 655(2001).Google Scholar
(10) Shibutami, T., Kawano, K., Oshima, N., Yokoyama, S., Funakubo, H., Mat. Res. Soc. Symp. Proc. 748(2003)Google Scholar
(11) Evans, J., Johnson, B.F.G. and Lewis, J., J. Chem. Soc., Dalton trans., 2668(1972).Google Scholar