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A Novel Low Temperature Synthesis Method for Semiconductor Nanowires

Published online by Cambridge University Press:  21 March 2011

Shashank Sharma ,
Mahendra K. Sunkara ,
Raul Miranda ,
Guoda Lian  and
Elizabeth C. Dickey
Shashank Sharma
Affiliation:
Department of Chemical Engineering, University of Louisville, Louisville, KY 40292, USA
Mahendra K. Sunkara*
Affiliation:
Department of Chemical Engineering, University of Louisville, Louisville, KY 40292, USA
Raul Miranda
Affiliation:
Department of Chemical Engineering, University of Louisville, Louisville, KY 40292, USA
Guoda Lian
Affiliation:
Department of Chemical and Materials Engineering, University of Kentucky, Lexington, KY 40506, USA
Elizabeth C. Dickey
Affiliation:
Department of Chemical and Materials Engineering, University of Kentucky, Lexington, KY 40506, USA
*
* Corresponding author: mahendra@louisville.edu
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Abstract

We present a novel synthesis technique to grow bulk quantities of semiconductor nanowires at temperatures less than 500 °C. Gallium is used as the liquid medium in a mechanism similar to vapor-liquid-solid (VLS). We demonstrated this low temperature technique with silicon and carbon nanowires. Gallium exhibits extremely low solubility for several elemental semiconductors. This property enables nucleation and growth of nanometer scale wires from large sized gallium droplets (>1 μm) eliminating the need for creation of quantum sized metal droplets.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 676: Symposium Y – Synthesis, Functional Properties and Applications of Nanostructures , 2001 , Y1.6
Copyright
Copyright © Materials Research Society 2001

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