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A Novel Method For The Diffusion Of Boron In 60-80 Micron Size Natural Diamond Type II/A Powder

Published online by Cambridge University Press:  01 February 2011

Adrian E. Mendez
Affiliation:
aemx88@mizzou.edu, University of Missouri-Columbia, Nuclear Science and Engineering Institute, 601 S.Providence Rd. Apt 707-A, Columbia, Missouri, 65203, United States, 573 356 5047
Mark A Prelas
Affiliation:
PrelasM@missouri.edu, University of Missouri-Columbia, Nuclear Science and Engineering Institute, E2433 Engineering Building East, Columbia, MO, 65211, United States
Michael Glascock
Affiliation:
MGlascock@missouri.edu, University of Missouri-Columbia, Columbia, MO, 65211, United States
Tushar K Ghosh
Affiliation:
TGhosh@missouri.edu, University of Missouri-Columbia, Nuclear Science and Engineering Institute, E2433 Engineering Building East, Columbia, MO, 65211, United States
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Abstract

The purpose of this paper is to report the experimental results of boron doping on 60-80 micron size diamond particles using Field Enhanced Diffusion with Optical activation (FEDOA) [1-5]. Diamond is a wide band gap material with unique combinations of optical, thermal, mechanical and electronic properties that can be useful for a number of applications including optoelectronic applications and micro sensor technology. The incorporation of boron into diamond has been proven to change its electrical properties and convert the diamond from insulator to a p-type semiconductor [3]. A promising technique for incorporation of impurities into diamond is FEDOA. FEDOA drives impurities into single crystalline diamond material and we have used this method in this study [5-7]. FEDOA uses a combination of thermal diffusion with bias plus thermal ionization and optical ionization I simultaneously. A modified version of FEDOA was implemented for the diffusion of boron in natural diamond type II/a powder of size 60-80 microns (Figure 1). The diamond powder was obtained from Microdiamant and has 99.9% purity. The boron powder used in the experiment was amorphous, 325 mesh 90 %(Assay), Mg (5%) nominal obtained from AESAR. A ratio of 3:1 Boron-Diamond mixture was used for the doping process. A heating element and a diamond-boron powder mixture holder were designed and incorporated in the FEDOA system. Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDS) were used to study the diamond-doped morphology and identify impurities. Boron and hydrogen concentration results in the doped samples were studied using Prompt Gamma Neutron Activation Analysis (PGNAA) at the University of Missouri Research Reactor (MURR). Raman analysis of the treated samples was done as part of this work. The experimental results and analysis show that the samples were doped with boron. It was also found that samples with high boron concentration exhibited a high electrical conductivity. This work presents additional evidence that boron can be diffused into natural diamond powders. It also demonstrates that the FEDOA diffusion process is not only a powerful technique for the diffusion of impurities into wide band-gap materials in the form of single crystal plates, polycrystalline plate but also in a powder form with the modified FEDOA process.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

1. Popovici, G., Sung, T., Prelas, M., Forced Diffusion in Diamond: A Review, Journal of Chemical Vapor Deposition, Vol. 3, pages 115-132, October 1994.Google Scholar
2. Prelas, M.A, Galina, Popovoci, Sung, T.Forced diffusion of impurities in natural diamond and polycrystalline diamond films”, J. Appl. Phys v77 56255629 1995 Google Scholar
3. Prelas, M.A, Galina, Popovoci, Sung, T.Properties of diffused diamond films with n-type conductivity”, Diamond and Related Material, v4 877881 1995 Google Scholar
4. Sung, T, Prelas, M.A, “Doping Diamond by Forced Diffusion”, dissertation, Univ. of Missouri-Columbia, May 1996 Google Scholar
5. Mendez, A., Prelas, M., Ghosh, T., Ross, L., “Chromium diffusion on Natural Diamond”, ANS Summer Meeting, June 5-9, 2005, San Diego, Ca.Google Scholar
6. Mendez, A., Prelas, M., Ghosh, T., Ross, L., “Study of Simultaneous Diffusion of Impurities into Natural Diamond CrystalsMSGC Annual Meting, April, 2005 Google Scholar
7. , Prelas, Popovoci, Mark, Galina, , Bigelow, , Louis, ., Handbook of industrial diamonds and diamond films, Mercel Decker 1998.Google Scholar
8. Spitsyn, A.B., Prelas, M.A., Tompson, Robert V., Ghosh, T.K., “Impurity Removal from 6-H SIC using reversed Field Enhanced Diffusion with Optical Activation,” Journal of Wide Band-Gap Materials Volume 10/October 2002, pages 149-160 (Release date Sept. 2004).Google Scholar
9. Spitsyn, A.B., Prelas, M.A., Tompson, Robert V., Ghosh, T.K., “Impurity Removal from 4-H SIC using reversed Field Enhanced Diffusion with Optical Activation,” Journal of Wide Band-Gap Materials Volume 10/October 2002, pages 89-98 (Release date Sept. 2004).Google Scholar