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The Novel Technique of Nanometer-Size Fabrication by Using Conventional Photolithography

Published online by Cambridge University Press:  10 February 2011

Shingi Hashioka  and
Hideki Matsumura
Shingi Hashioka
Affiliation:
JAIST(Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923–1292, JAPAN, shingi@jaist.ac.jp
Hideki Matsumura
Affiliation:
JAIST(Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923–1292, JAPAN, shingi@jaist.ac.jp
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Abstract

A novel method to prepare nanometer-size patterns by using currently available massproduction technology is proposed. In this study, a contact pattern-mask with nanometersize slit is fabricated by combination of photolithography and anodic oxidation of metal. The slit width of the pattern-mask can be controlled in the order of nano-meters by anodic voltage during oxidation of side-wall of the metal. 10nm width trench is formed in Si substrate by using such nanometer slit-mask. It is suggested that the technique can be utilized as fabrication process of the nano-scale devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 584 , 1999 , 313
Copyright
Copyright © Materials Research Society 2000

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