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Nuclear Spin-Lattice Relaxation Via Paramagnetic Centers in Amorphous Hydrogenated Silicon (a-Si:H)

Published online by Cambridge University Press:  21 February 2011

Man Ken Cheung  and
Mark A. Petrich
Man Ken Cheung
Affiliation:
Department of Chemical Engineering, The Robert R. McCormick School of Engineering and Applied Science, Northwestern University, Evanston, IL 60208–3120, USA
Mark A. Petrich
Affiliation:
Department of Chemical Engineering, The Robert R. McCormick School of Engineering and Applied Science, Northwestern University, Evanston, IL 60208–3120, USA
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Abstract

This is the first NMR study of a-Si:H which measures the 29Si spin-lattice relaxation time, T1. Measurements of T1 are useful in learning about the silicon network structure and the localized states within the mobility gap. Dangling-bonds are randomly distributed in device quality materials but are inhomogeneously distributed in nondevice quality materials. There are two simultaneously occurring dangling-bond spin-lattice relaxation mechanisms: one is through the spin-orbit coupling modulated by thermal excitation of “two-level systems”, and the other is through hopping conduction between localized states near the Fermi level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 599
Copyright
Copyright © Materials Research Society 1991

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References

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