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Nucleation Time Effects on Intrinsic Gettering

Published online by Cambridge University Press:  21 February 2011

C.-C. D. Wongm ,
M. L. Malwah  and
L. Pollock
C.-C. D. Wongm
Affiliation:
Integrated Device Technology, Inc. 3236 Scott Boulevard Santa Clara, CA 95051
M. L. Malwah
Affiliation:
Integrated Device Technology, Inc. 3236 Scott Boulevard Santa Clara, CA 95051
L. Pollock
Affiliation:
Integrated Device Technology, Inc. 3236 Scott Boulevard Santa Clara, CA 95051
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Abstract

In this study, nucleation time has been found to play an important role in the three-step (Hi-Lo-Hi) intrinsic gettering process. The longer the nucleation time, the higher the density of oxygen precipitates and oxidation induced stacking faults. The size of oxidation induced stacking faults, however, shrinks as the nucleation time increases. The reduction of junction leakage current indicates that gettering efficiency improves with increasing nucleation time. Oxidation induced stacking faults appear to be the dominant gettering sites.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 239
Copyright
Copyright © Materials Research Society 1985

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References

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