Skip to main content
×
Home

Numerical Modeling of Electrothermal Effects in Silicon Nanowires

  • Cicek Boztug (a1), Gokhan Bakan (a2), Mustafa Akbulut (a3), Ali Gokirmak (a4) and Helena Silva (a5)...
Abstract
Abstract

Asymmetric melting was observed in electrically pulsed n-type (phosphorus) nanocrystalline silicon (nc-Si) wires fabricated lithographically. Scanning electron microscope (SEM) images taken from the pulsed wires showed that melting initiates from the ground terminal end of the wires instead of the center as initially expected. Asymmetry in the temperature profile is caused by heat exchanged between charge carriers and phonons when an electrical current is passed along a temperature gradient. This effect is known as Thomson effect, a thermoelectric heat transfer mechanism. One dimensional (1D) time dependent heat diffusion equation including Thomson heat term was solved to model the temperature profile on our structures. The modeling results show that Thomson effect introduces significant shifts in the temperature distribution. The effect of Thomson heat is modeled for various electrical pulse conditions and wires dimensions. Our results indicate that Thomson effect is significant in small scale electronic devices operating under high current densities.

Copyright
References
Hide All
1. Chen G., Shakouri A., J. Heat Trans. 124, 242 (2002).
2. Huang M. J., Yen R. H., and Wang A. B., International Journal of Heat and Mass Transfer 48, 413 (2005).
3. Pirovano A., Lacaita A. L., Benvenuti A., Pellizzer F., Bez R., IEEE Trans. Elect. Dev. 51, 452 (2004).
4. Pop E., Sinha S. and Goodson K. E., Proceedings of the IEEE 94, 1587 (2006).
5. Mastrangelo C. H., Yeh J. H., Muller R. S., IEEE Trans. Elect. Dev. 39, 1363 (1992)
6. Jungen A., Pfenninger M., Tonteling M., Stampfer C., Hierold C., J. Micromech. Microeng. 16, 1633 (2006)
7. Thomas L. C., Heat Transfer Professional Version (Prentice Hall, Inc, New Jersey, 1993).
8. Lin L., Chiao M., Sens. Actuators A 55, 35 (1996).
9. MacDonald D. K. C., Thermoelectricity: an Introduction to the Principles (Dover Publications Inc., Mineola, NY, 2006) P. 924.
10. Fulkerson W., Moore J. P., Williams R. K., Graves R. S., McElroy D. L., Phys. Rew. 167, 765 (1968).
11. Gaidry T. H. T., “Thermal Conductivity, Seebeck Coefficient, and Electrical Resistivity of Heavily Phosphorous-Doped Silicon from 313 K to 673 K,” Technical Report, South Dakota School of Mines and Technology Rapid City, Department of Physics, available from the National Technical Information Service, (1967).
12. Jones D. I., Comber P. G. Le, Spear W. E., Phil. Mag. 36, 541 (1977)
13. Touloukian Y. S., Thermophysical Properties of High Temperature Solid Materials (The Macmillan Company NY, 1967).
14. Lott C. D., McLain T. W., Harb J. N., and Howell L. L., Sens. Actuators A 101, 239 (2002).
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Keywords:

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 8 *
Loading metrics...

Abstract views

Total abstract views: 52 *
Loading metrics...

* Views captured on Cambridge Core between September 2016 - 24th November 2017. This data will be updated every 24 hours.