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Observation and Modelling of Electromigration-Induced Void growth in Al-Based Interconnects

Published online by Cambridge University Press:  21 February 2011

O. Kraft ,
S. Bader ,
J.E. Sanchez Jr  and
E. Arzt
O. Kraft
Affiliation:
Max-Planck-Institut für Metallforschung, and Institut für Metallkunde, University of Stuttgart, D-7000 Stuttgart, Germany;
S. Bader
Affiliation:
Max-Planck-Institut für Metallforschung, and Institut für Metallkunde, University of Stuttgart, D-7000 Stuttgart, Germany;
J.E. Sanchez Jr
Affiliation:
Advanced Micro Devices, Sunnyvale, CA 94088, USA
E. Arzt
Affiliation:
Max-Planck-Institut für Metallforschung, and Institut für Metallkunde, University of Stuttgart, D-7000 Stuttgart, Germany;
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Abstract

Accelerated electromigation tests on unpassivated, pure aluminum interconnects were performed. The failure mechanisms were observed by interrupting the tests and exanming the conductor lines using an SEM. Because the metal thin film was subjected to a so-called laser reflow process before patterning, grain boundaries were visible in the SEM as thermal grooves. Voids were observed to move along the line and to grow in a transgranular manner, and a characteristic asymmetric void shape was identified which seems to be related to the failure mechanism. It is argued that substantial progress in modelling and understanding of electromigration failure can be made by consideration of such void shape effects.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 199
Copyright
Copyright © Materials Research Society 1993

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References

1. Mayumi, S., Umemoto, T., Shishino, M, Nanatsue, H., Ueda, S., and Inoue, M., in Proc. 25th Annual Meetiné of International Reliability Physics Symposium, (IEEE Publishing Services, NY, 1987), p. 15.Google Scholar
2. Sanchez, J.E. Jr., Kraft, O., and Arzt, E., Appl. Phys. Lett. 61, 3121 (1993).CrossRefGoogle Scholar
3. Rose, J.H.: Appl. Phys. Lett. 61, 2170 (1992).Google Scholar
4. Chen, S. and Ong, E. in Symp. on Microelectronic Integrated Processing: Conference on Laser/Optical Processing of Electronic Materials (Proc. of SPIE Santa Clara, CA, 1989).Google Scholar
5. Kraft, O., Sanchez, J.E., and Arzt, E.: in Materials Reliability in Microelectronics II, edited by Thompson, C.V. and Lloyd, J.R. (Mat. Res. Soc. Symp. Proc. 265, San Francisco 1992), pp. 119–124.Google Scholar
6. Sanchez, L.E., Kraft, O. and Arzt, E. in First Int. Workshop on Stress Induced Phenomena in Metallizations, (Am. Vac. Soc. Conf. Proc. 263, Ithaca, NY, 1991), p. 250.Google Scholar
7. Lytle, S.A. and Oates, A.S.: J. Appl. Phys. 71,174 (1992).Google Scholar
8. Besser, P.R., Madden, M.C., and Flinn, P.A.: J. Appl. Phys. 72, 3792 (1992).CrossRefGoogle Scholar