An experiment was performed to study the oxidation-enhanced and -retarded diffusion (OED and ORD) of Sb in silicon wafers oxidized in dry O2 at 1160°C. The ORD data of (100) wafers agree well with the prediction of a model assuming that Si self-interstitials (I) and vacancies (V) coexist in thermal equilibrium at high temperatures. An adjustment of the I supersaturation values is needed to bring the ORD/OED data of (111) wafers to fit with the model satisfactorily. This indicates the existence of a mechanism which injects V into (111) wafers in addition to the normal mechanism of I injection due to SiO2 growth.
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