Skip to main content
×
×
Home

Observation of Oxidation-Enhanced and -Retarded Diffusion of Antimony in Silicon: The Behavior of (111) Wafers

  • T. Y. Tan (a1) and B. J. Ginsberg (a1)
Abstract

An experiment was performed to study the oxidation-enhanced and -retarded diffusion (OED and ORD) of Sb in silicon wafers oxidized in dry O2 at 1160°C. The ORD data of (100) wafers agree well with the prediction of a model assuming that Si self-interstitials (I) and vacancies (V) coexist in thermal equilibrium at high temperatures. An adjustment of the I supersaturation values is needed to bring the ORD/OED data of (111) wafers to fit with the model satisfactorily. This indicates the existence of a mechanism which injects V into (111) wafers in addition to the normal mechanism of I injection due to SiO2 growth.

Copyright
References
Hide All
1. Seeger, A., and Chik, K. P., Phys. Stat. Sol. 29, 455 (1968).
2. Hu, S. M., J. Appl. Phys. 45, 1567 (1974).
3. Shaw, D., Phys. Stat. Sol. b72, 11 (1975).
4. van Vechten, J. A., Phys. Rev. B17, 3197 (1978).
5. Bourgoin, J. C., and Lannoo, M., Rad. Effects 46, 157 (1980).
6. Gosele, U., Frank, W., and Seeger, A., Appl. Phys. 23, 361 (1980).
7. Tan, T. Y., and Gosele, U., Appl. Phys. Lett. 40, 616 (1982).
8. Tan, T. Y., and Gosele, U., in Extended Abstracts 82–1 The Electrochemical Society (Electrochemical Society, New Jersey, 1982) p. 314.
9. Antoniadis, D. A., and Moskowitz, I., J. Appl. Phys. in press.
10. Tan, T. Y., Gosele, U., and Morehead, F. F., to be published.
11. Mizuo, S., and Higuchi, H., Jpn. J. Appl. Phys. 20, 739 (1981).
12. Sirtl, E., in Semiconductor Silicon 1977 Huff, H. R., and Sirtl, E. eds (Electrochemical Society, New Jersey, 1977) p.4.
13. Leroy, B., J. Appl. Phys. 50, 7996 (1979).
14. Tan, T. Y., and Gosele, U., J. Appl. Phys. 53, 4767 (1982).
15. Antoniadis, D. A., Lin, A. M., and Dutton, R. W., Appl. Phys. Lett. 33, 1030 (1978).
16. Lin, A. M., Antoniadis, D. A., and Dutton, R. W., J. Electrochem. Soc. 128, 1131 (1981).
17. Francis, R., and Dobson, P. S., J. Appl. Phys. 50, 280 (1979).
18. Hu, S. M., Appl. Phys. Lett. 27, 165 (1975).
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed