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Observation of the CdTe-GaAs Interface by High Resolution Electron Microscopy

Published online by Cambridge University Press:  26 February 2011

N. Otsuka ,
L. A. Kolodziejski ,
R. L. Gunshor ,
S. Datta ,
R. N. Bicknell  and
J. F. Schetzina
N. Otsuka
Affiliation:
Purdue University W. Lafayette, IN 47907
L. A. Kolodziejski
Affiliation:
Purdue University W. Lafayette, IN 47907
R. L. Gunshor
Affiliation:
Purdue University W. Lafayette, IN 47907
S. Datta
Affiliation:
Purdue University W. Lafayette, IN 47907
R. N. Bicknell
Affiliation:
Department of Physics North Carolina State University Raleigh, North Carolina 27695-8202
J. F. Schetzina
Affiliation:
Department of Physics North Carolina State University Raleigh, North Carolina 27695-8202
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Abstract

CdTe films have been grown on GaAs substrates with two types of interfaces - one with the epitaxial relation (111)CdTe║ (100)GaAs and the other with (100)CdTe║ (100)GaAs,. High resolution electron microscope observation of the two types of interfaces was carried out in order to determine the role of the substrate surface microstructure in determining the epitaxy. The interface of the former type shows a direct contact between the CdTe and GaAs crystals, while the interface of the latter type has a very thin oxide layer (∼10 Å in thickness) between the two crystals. These observations suggest that details of the substrate preheating cycle prior to film growth is the principle factor in determining which epitaxial relation occurs in this system. The relation between interfacial structures and the origin of the two epitaxial relations is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 449
Copyright
Copyright © Materials Research Society 1985

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