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Observation of the Wurtzite Phase in OMVPE Grown ZnSe/GaAs: Effect on Implantation and Rapid Thermal Annealing

Published online by Cambridge University Press:  21 February 2011

K. S. Jones ,
J. Yu ,
P. D. Lowen  and
D. Kisker
K. S. Jones
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
J. Yu
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
P. D. Lowen
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
D. Kisker
Affiliation:
AT&T Bell Laboratories, Crawfords Corner Road, Holmdel, NJ 07733
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Abstract

Transmission electron diffraction patterns of cross-sectional TEM samples of OMVPE ZnSe on GaAs indicate the existence of the hexagonal wurtzite phase in the epitaxial layers. The orientation relationship is (0002)//(111); (1120)//(220). Etching studies indicate the phase is internal not ion milling induced. The average wurtzite particle size is 80Å-120Å. Because of interplanar spacing matches it is easily overlooked. Electrical property measurements show a high resistivity (1010ω/square) which drops by four orders of magnitude upon rapid thermal annealing between 700°C and 900 °C for 3 sec. Implantation of Li and N have little effect on the electrical transport properties. The Li is shown to have a high diffusivity, a solid solubility of ≈1016/cm3 at 800°C and getters to the ZnSeA/aAs interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 339
Copyright
Copyright © Materials Research Society 1989

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