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On the Formation of Thick and Multiple Layer Simox Structures and their Applications

Published online by Cambridge University Press:  21 February 2011

F. Namavar ,
E. Cortesi ,
R. A. Soref  and
P. Sioshansi
F. Namavar
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
E. Cortesi
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
R. A. Soref
Affiliation:
Rome Air Development Center, Hanscom AFB, MA 01731
P. Sioshansi
Affiliation:
Rome Air Development Center, Hanscom AFB, MA 01731
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Abstract

This paper will address the formation of SIMOX structures with thick and multiple buried SiO2 layers by multiple oxygen implantation and growth of epitaxial Si by chemical vapor deposition (CVD). Our results indicate that SIMOX material can be produced with a buried layer of any thickness or with any number of distinct buried oxide layers and distinct silicon layers. Thick and double buried SiO2 layer material may be useful for high voltage isolation and electric field shielding.

In addition, we have demonstrated optical waveguide action in SIMOX wafers. This suggests that in a double buried SiO2 layer system, three dimensional stacked integration of silicon waveguides is possible, including two level optical interconnects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 241
Copyright
Copyright © Materials Research Society 1989

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References

1. Hemment, P.L.F., Reeson, K.J., Kilner, J.A., Chater, R.J., Marsh, C., Booker, G.R., Davis, J.R., and Celler, G.K., Nucl. Instr. and Meth. B 21, 129 (1987).Google Scholar
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