Hostname: page-component-7c8c6479df-7qhmt Total loading time: 0 Render date: 2024-03-29T08:02:51.642Z Has data issue: false hasContentIssue false

On the Temperature Dependence of Resistivity of Polycrystalline Silicon Films

Published online by Cambridge University Press:  22 February 2011

Mark S. Rodder
Affiliation:
Texas Instruments Inc., Dallas, TX 75265
Dimitri A. Antoniadis
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
Get access

Abstract

It is shown that the grain boundary (GB) in polycrystalline-silicon (poly-Si) films need not be modeled as a temperature-dependent potential barrier or as an amorphous region to explain the temperature (T) dependence of resistivity (ρ) in p-type poly-Si films at low T. Specifically, we consider that QB defect states allow for the tunneling component of current to occur by a two-step process. Incorporation of the two-step process in a numerical calculation of ρ vs. T results in excellent agreement with available data from 100 K to 300 K.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lu, N.C.C., Gerzberg, L., Lu, C.Y., and Meindl, J.D., IEEE Trans. on Elec. Dev. ED–30, 137 (1983).Google Scholar
2. Mayadas, A.F. and Shatzkes, M., Phys. Rev. B 1, 1382 (1970).Google Scholar
3. Kim, D.M., Khondker, A.N., Ahmed, S.S., and Shah, R.R., IEEE Trans. on Elec. Dev. ED–31, 480 (1984).Google Scholar
4. Bethe, H.A., MIT Radiat. Lab. Rep. 43, 12 (1942).Google Scholar
5. Shewchun, J., Waxman, A., and Warfield, G., Solid St. Elec. 10, 1165 (1967).Google Scholar
6. Lee, P., private communication.Google Scholar
7. de Groot, A.W. and Card, H.C., IEEE Trans. on Elec. Dev. ED–31, 1370 (1984).Google Scholar
8. Werner, J., in Polycrystalline Semiconductors, edited by Harbeke, G. (Springer-Verldg Publishers, New York, 1985), p. 76.CrossRefGoogle Scholar
9. Lu, N.C.C., Gerzberg, L., Lu, C.Y., and Meindl, J.D., IEEE Trans. on Elec. Dev. ED–28, 818 (1981).Google Scholar