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Open Resonator Technique for Measurement of Thin Dielectric Film Properties on Optically Dense Substrates

Published online by Cambridge University Press:  10 February 2011

Sergey Dudorov ,
Dmitri Lioubtchenko ,
Juha Mallat ,
Jussi Tuovinen  and
Antti V. Räisänen
Sergey Dudorov
Affiliation:
MilliLab, Helsinki University of Technology, Radio Laboratory, P.O. Box 3000, FIN-02015 HUT, Finland
Dmitri Lioubtchenko
Affiliation:
MilliLab, Helsinki University of Technology, Radio Laboratory, P.O. Box 3000, FIN-02015 HUT, Finland
Juha Mallat
Affiliation:
MilliLab, Helsinki University of Technology, Radio Laboratory, P.O. Box 3000, FIN-02015 HUT, Finland
Jussi Tuovinen
Affiliation:
MilliLab, VTT Information Technology, Espoo, Finland
Antti V. Räisänen
Affiliation:
MilliLab, Helsinki University of Technology, Radio Laboratory, P.O. Box 3000, FIN-02015 HUT, Finland
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Abstract

Thin dielectric films on the dielectric substrate are widely employed in millimeter and submillimeter wave device applications, so the problem of precise measurement of their properties is important. One of the most accurate technique for measurement of dielectric properties is the open resonator technique.

In this work we propose the method for measurements of thin dielectric film properties on the dielectric substrate using the open semispherical resonator. A good agreement (within 1 %) was obtained in refractive index data between results obtained with direct measurements and with proposed method for thin layer of SI GaAs on a sapphire substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 631: Symposium AA – Millimeter-/Submillimeter-Wave Technology Materials, Devices and Diagnostics , 2000 , AA1.7
Copyright
Copyright © Materials Research Society 2000

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References

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