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Optical Absorption of the Isolated AsGa Antisite and AnEL2 - Like Defect in neutron-Transmutation Doped GaAs.

Published online by Cambridge University Press:  28 February 2011

M. O. Manasreh  and
D. W. Fischer
M. O. Manasreh
Affiliation:
Air Force Wright Aeronautical Laboratories, Materials Laboratory (AFWAL/MLPO), Wright - Patterson Air Force Base, Ohio 45433 - 6533
D. W. Fischer
Affiliation:
Air Force Wright Aeronautical Laboratories, Materials Laboratory (AFWAL/MLPO), Wright - Patterson Air Force Base, Ohio 45433 - 6533
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Abstract

The infrared (IR) absorption technique concurrent with thermal annealing was used to study the isolated AsGa antisite and an EL2-like defect in thermal neutron irradiated GaAs samples grown by the liquid-encapsulated Czochralski (LEC) technique. The residual absorption (unquenchable component) of the IR absorpion spectrum, after EL2 is completely photoquenched, is interpreted as the photoionization of the isolated ASGa antisite. This interpretation is supported by thermal annealing results at 600 C and by the increase of the unquenchable component as the irradiation dose is increased. A thermally unstable EL2-like defect is observed in heavily irradiated GaAs samples after 6 min annealing at 600 C. Thermal annealing kinetics show that the EL2-like defect is composed of three point defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 273
Copyright
Copyright © Materials Research Society 1989

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