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Optical and Infrared Spectroscopy of Laser Irradiated BI Implanted SiO2 Glasses

Published online by Cambridge University Press:  28 February 2011

R. H. Magruder III ,
D. O. Henderson ,
S. H. Morgan  and
R. A. Zuhr
R. H. Magruder III
Affiliation:
Materials Science & Engineering Dept., Vanderbilt University, Nashville, TN 37235
D. O. Henderson
Affiliation:
Physics Dept., Fisk University, Nashville, TN 37208
S. H. Morgan
Affiliation:
Physics Dept., Fisk University, Nashville, TN 37208
R. A. Zuhr
Affiliation:
Solid State Division, Oak Ridge National Lab, Oak Ridge, TN 37831
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Abstract

Optical and infrared reflection spectra for Bi-implanted high-purity silica are reported as a function of dose and 5eV laser irradiation. The extinction coefficient per ion and the reflectance spectra are dose dependent. Subsequent effects of laser irradiation are dependent upon Bi content and total number of laser pulses. Changes reported are attributed to two photothermal processes. One involving diffusion and desorption of Bi ions and annealing of defects, while the second is dominated by annealing.

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