Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-19T07:31:24.078Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Characterization of Ultrathin Silicon Substrates

Published online by Cambridge University Press:  10 February 2011

T. Globus ,
S. H. Jones  and
T. Digges Jr.
T. Globus
Affiliation:
EE Department, University of Virginia, Charlottesville, VA 22903
S. H. Jones
Affiliation:
EE Department, University of Virginia, Charlottesville, VA 22903
T. Digges Jr.
Affiliation:
Virginia Semiconductor Inc, Fredericksburg, VA 22401
Get access

Abstract

In this paper we present results for the absorption coefficient and refractive index spectra of p-and n-type silicon membranes doped with phosphorous or boron at different levels. These results cover the wide energy range from 0.5 eV up to 2.5 eV, thus including effects of subgap defect and impurity absorption, and the range of possible transitions to higher conduction band minima. The results have been obtained by utilizing both a conventional transmission and reflection measurement technique at small values of transmittance, and a recently developed optical interference spectroscopy characterization technique. The results in the visible and near infrared regions from the two techniques have been compared, and the range of transmission where the conventional technique is applicable have been determined. The preliminary analysis of these data indicate that a new information regarding the Si electronic band structure can be extracted.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 25
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sieh, K.S., Smith, P.V., Phys. Status Solidi (b), 129, p.259 (1985).Google Scholar
2. Geist, J., Migdall, A., and Baltes, H., Applied Optics, V29, N24, 3548–3554 (1990).Google Scholar
3. Geist, J., Schaefer, A.R., Song, J.F., Wang, Y. H., and Zalewski, F., J. of Research of the National Institute of Standards and Technology, V95, N5, 549 (1990).Google Scholar
4. Globus, T., Gildenblat, G., Fonash, S., MRS Proc., 406, p. 313 (1996).Google Scholar
5. Globus, T., International Semiconductor Device Research Symposium, Proc. Vol.1, 27, Charlottesville, VA, Dec. 1995.Google Scholar
6. Physics of group IVelements & III-Vcompounds ed by Madelung, O., p.386, Fig. 117, ch 1.2-Silicon (1981).Google Scholar
7. Landolt-Bomstein, , Numerical Data and Functional Relationships in Science and Technology. Band17, p.20 (1985).Google Scholar
8. Cody, G. D., MRS Symp. Proc. V.192, p. 113 (1990).Google Scholar
9. Forman, R. A., Thurber, W. R, and Aspnes, D. E., Solid State Comm. V. 14, pp. 1007 (1974).Google Scholar
10. Weakliem, H. A., Redfield, D., J. Applied Phys., 50 (3), 1491 (1979).Google Scholar