Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-28T04:32:58.344Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical properties and carrier dynamics of ensembles of InP nanowires grown on non-single-crystal platforms

Published online by Cambridge University Press:  31 January 2011

Takehiro Onishi ,
Andrew J. Lohn  and
Nobuhiko P. Kobayashi
Takehiro Onishi
Affiliation:
bigwest@soe.ucsc.edutohnishi@ucsc.edu, University of California, Santa Cruz, Electrical Engineering, 1156 High St, rm 230 Jack Baskin Engineering Bldg, Santa Cruz, California, 95064, United States, 831-459-1292
Andrew J. Lohn
Affiliation:
drewlohn@gmail.com, University of California Santa Cruz, Baskin School of Engineering, Santa Cruz, California, United States
Nobuhiko P. Kobayashi
Affiliation:
nobby@soe.ucsc.edu, Hewlett-Packard Laboratories, Information and Quantum Systems Laboratory, Palo Alto, California, United States
Get access

Abstract

Optically active InP nanowires were grown on a quartz substrate covered with a layer (100 nm) of hydrogenated amorphous silicon (a-Si:H) by metalorganic chemical vapor deposition (MOCVD), demonstrating that single-crystal semiconductor nanowires can be formed on non-single-crystal surfaces. Scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, cathodoluminescence (CL), and photoluminescence (PL) were used to characterize the structural and optical properties of the nanowires. The nanowires on a-Si:H grew in random directions with high density. The XRD suggests that nanowires having either hexagonal-close-packed or face-centered cubic lattices co-exist. The Raman spectrum shows peaks associated with transverse optical (TO) and longitudinal optical (LO) branches of InP. The CL intensity does not vary signi?cantly along the growth direction and appears to be originated from the entire structure of the nanowire when probed at various positions. The CL data suggests that recombination is slow enough to allow the carriers to diffuse the complete length of the nanowires (˜2 m in length) before recombining. The PL spectrum suggested the nanowire had a part that contributes to the observed blue shift while the other part had nearly bulk feature in their structure.

Keywords

nanostructureoptical propertieshydrogenation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1178: Symposium AA – Semiconductor Nanowires–Growth, Size-Dependant Properties and Applications , 2009 , 1178-AA01-04
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Xia, Younan, Yang, Peidong, Sun, Yugang, Wu, Yiying, Mayers, Brian, Gates, Byron, Yin, Yadong, Kim, Franklin, and Yan, Haoquan. One-dimensional nanostructures: Synthesis, characterization, and applications. Advanced Materials, 15(5):353–389.Google Scholar
[2] Wagner, R. S., Ellis, W. C., “Vapor-liquid-solid mechanism of single crystal growth,” Applied Physics Letters 4, 89, 1964.Google Scholar
[3] Kobayashi, Nobuhiko P, Wang, Shin-Yuan, Santori, Charles, and Williams, R. Stanley. Indium Phosphide Nanoneedles on Non-single Crystalline Semiconductor Surfaces. J. J. Appl. Phys., 46(9B):6346–6351, 2007.Google Scholar
[4] Kobayashi, Nobuhiko P, Wang, S.Y, Santori, C, and Williams, R.S. Growth and characterization of indium phosphide single-crystal nanoneedles on microcrystalline silicon surfaces. Appl. Phys. A 85(1):1–6, Oct 2006.Google Scholar
[5] Mooradian, A and Wright, G B. First order raman effect in iii–v compounds. Solid State Communications, 4(9):431–434, 1966.Google Scholar
[6] Mattila, M, Hakkarainen, T, Mulot, M, and Lipsanen, H. Crystal-structure-dependent photoluminescence from inp nanowires. Nanotechnology, 17:1580–1583, Feb 2006.Google Scholar