Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-29T19:57:57.676Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Properties of Aluminium and Nitrogen in Compensated 4H-SiC Epitaxial Layers

Published online by Cambridge University Press:  21 March 2011

Mikael Syväjärvi ,
Rositza Yakimova ,
Anelia Kakanakova-Georgieva ,
Anne Henry ,
Erik Janzén  and
Margareta K. Linnarsson
Mikael Syväjärvi
Affiliation:
Linköping University, Dept of Physics and Measurement Technology, SE-581 83 Linköping, SWEDEN
Rositza Yakimova
Affiliation:
Linköping University, Dept of Physics and Measurement Technology, SE-581 83 Linköping, SWEDEN
Anelia Kakanakova-Georgieva
Affiliation:
Linköping University, Dept of Physics and Measurement Technology, SE-581 83 Linköping, SWEDEN
Anne Henry
Affiliation:
Linköping University, Dept of Physics and Measurement Technology, SE-581 83 Linköping, SWEDEN
Erik Janzén
Affiliation:
Linköping University, Dept of Physics and Measurement Technology, SE-581 83 Linköping, SWEDEN
Margareta K. Linnarsson
Affiliation:
Royal Institute of Technology, Dept of Solid State Electronics, SE-164 40 Kista, SWEDEN
Get access

Abstract

Compensating impurities affect the device performance but still the fundamental knowledge of this effect in SiC is poor. We demonstrate that the optical properties are affected by compensation effects between the nitrogen donor and aluminium acceptor in 4HSiC epilayers. As demonstrated using low-temperature photoluminescence measurements, the interaction occurs between the impurity bound excitons caused by changes in the aluminium concentration while the nitrogen concentration is constant. The variation is observed over two orders of magnitude in the aluminium concentration. The interplay is also observed in cathodoluminescence measurements between the band edge luminescence and nitrogen-aluminium donor-acceptor pair emission. These observations may be possible to utilize for a non-destructive characterization of compensated epilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H7.10
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Baliga, B.J., Modern power devices, 10th ed. (John Wiley and Sons, Toronto 1987) p. 51.Google Scholar
[2] Syväjärvi, M., Yakimova, R., Tuominen, M., Kakanakova-Georgieva, A., MacMillan, M.F., Henry, A., Wahab, Q., and Janzén, E., J. Crystal Growth 197, 155 (1999).Google Scholar
[3] Syväjärvi, M., Yakimova, R., Jacobsson, H., Linnarsson, M., Henry, A., and Janzén, E., Mat. Sci. Forum 338–342, 165 (2000).Google Scholar
[4] Patrick, L., Choyke, W.J., and Hamilton, D.R., Phys. Rev. 137, A1515 (1965).Google Scholar
[5] Clemen, L.L., Devaty, R.P., MacMillan, M.F., Yoganathan, M., Choyke, W.J., Larkin, D.J., Powell, J.A., Edmond, J.A., and Kong, H.S., Appl. Phys. Lett. 62, 2953 (1993).Google Scholar
[6] Ivanov, I.G., Hallin, C., Henry, A., Kordina, O., and Janzén, E., J. Appl. Phys. 80, 3504 (1996).Google Scholar