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Optical Properties of Diffused AlGaAs/GaAs Multiple Quantum Wells and their Applications in high Power Laser

Published online by Cambridge University Press:  10 February 2011

Yi Luo ,
Ai-Qing Jiang ,
Zhi-Biao Hao ,
Jian-Hua Wang ,
Terry W. K. Lai  and
E. Herbert Li
Yi Luo
Affiliation:
State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing, China
Ai-Qing Jiang
Affiliation:
State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing, China
Zhi-Biao Hao
Affiliation:
State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing, China
Jian-Hua Wang
Affiliation:
State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing, China
Terry W. K. Lai
Affiliation:
Department of Electrical and Electronic Engineering, University of Hong Kong, Pokrulam Road, Hong Kong, e-mail : ehli@eee.hku.hk
E. Herbert Li
Affiliation:
Department of Electrical and Electronic Engineering, University of Hong Kong, Pokrulam Road, Hong Kong, e-mail : ehli@eee.hku.hk
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Abstract

We will present results for an Al0.24Ga0.76As/GaAs diffused multiple quantum well with five periods of 100/100 Å thick well/barrier layers grown in between Al0.24Ga0.76As guiding layers and cladded on top by a 1 μm thick p-Al0.44Ga0.56As layer and on the bottom by an n-Al0.44Ga0.56As layer of equal thickness, on a n+-GaAs buffer layer and n+-GaAs substrate. Vacancy enhanced QW diffusion is employed where a 2000 Å thick layer of SiO2 is deposited on top of the diffused multiple quantum well structure. Photoluminescence measurement and photovoltage measurement at room temperature show that after rapid thermal annealing for 30 sec at 1000 °C to 1040 °C, a bandgap shift of 30 nm is obtained for the exciton edge. Further, this technique is applied to a ridge waveguide laser structure to make two windows for high power output up to 36 mW. This device shows that the diffusion process may have practical applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 395
Copyright
Copyright © Materials Research Society 1997

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