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Optical Properties of Se+- and Zn+-Implanted GaAs: Photoluninescence Behavior at the Band-Edge

Published online by Cambridge University Press:  21 February 2011

Yunosuke Makita ,
Masahiko Mori ,
Hae-Chol Lee ,
Toshihiko Kanayama ,
Nobukazu Ohnishi ,
Hideki Tanaka ,
Paul Phelan  and
Tokue Matsumori
Yunosuke Makita
Affiliation:
Electrotechnical Laboratory, 1-1–4 Umezono, Tsukuba-shi, 305 Japan
Masahiko Mori
Affiliation:
Electrotechnical Laboratory, 1-1–4 Umezono, Tsukuba-shi, 305 Japan
Hae-Chol Lee
Affiliation:
Tokai University, 1117 Kitakaname, Hiratsuka-shi, 259-12 Japan
Toshihiko Kanayama
Affiliation:
Electrotechnical Laboratory, 1-1–4 Umezono, Tsukuba-shi, 305 Japan
Nobukazu Ohnishi
Affiliation:
Institute of Fundamental Analysis, 3–24-3 Yoyogi, Shibuya-ku, 151 Japan
Hideki Tanaka
Affiliation:
Tokai University, 1117 Kitakaname, Hiratsuka-shi, 259-12 Japan
Paul Phelan
Affiliation:
Electrotechnical Laboratory, 1-1–4 Umezono, Tsukuba-shi, 305 Japan
Tokue Matsumori
Affiliation:
Tokai University, 1117 Kitakaname, Hiratsuka-shi, 259-12 Japan
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Abstract

Ion implantation of Se+ and Zn+ ions into GaAs was carried out and characterization was performed by photoluminescence and Raman scattering at 2 K and room temperature, respectively. For comparison, implantation of Cd+ ions was also performed and further. a series of Si-doped GaAs samples were prepared by molecular beam epitaxy. In the Se+-implanted samples. with Se concentration between 1×1016 cm−3 and 5×1019 ca−3 the dominant radiative transition was the band-to-band emission, (B-B). No energy shift characteristic of (B-B) was observed but instead, the formation of a complex radiative center between donor impurities and implantation-induced damages, [D.LD] was revealed. This was in contrast to the Si-doped GaAs which displayed a pronounced energy shift of (B-B) towards higher energies with increasing Si concentration. The results suggest that (B-B) (reflecting the raising of the quasi Fermi-energy due to the increase of net free electron concentration) is significantly suppressed in the donor-ion implanted GaAs due to the presence of unremovable damages caused by implantation. In the Zn+ -implanted GaAs, the dominant emission was [g-g] which is formed just below the bound exciton emissions. The energy shift of [g-g] towards lower energies with increasing implanted Zn concentration was reproducibly observed. Thus clear differences in the PL spectra of donor- and acceptor-implanted samples were observed near the fundamental band edge. It was suggested that residual radiation damages suppress (B-B) but have little effect on acceptor-related emissions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 171
Copyright
Copyright © Materials Research Society 1988

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References

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