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Optical Studies of Microstructure in a-Si:H

Published online by Cambridge University Press:  25 February 2011

M. Vaněček ,
D. Červinka ,
M. Favre ,
H. Curtins  and
A. V. Shah
M. Vaněček
Affiliation:
Institute of Physics, Czechoslovak Academy of Sciences, Na Slovance 2, CS-180 40 Praha, Czechoslovakia
D. Červinka
Affiliation:
Institute of Physics, Czechoslovak Academy of Sciences, Na Slovance 2, CS-180 40 Praha, Czechoslovakia
M. Favre
Affiliation:
Institute of Microtechnology, Breguet 2, CH-2000 Neuchâtel, Switzerland
H. Curtins
Affiliation:
Institute of Microtechnology, Breguet 2, CH-2000 Neuchâtel, Switzerland
A. V. Shah
Affiliation:
Institute of Microtechnology, Breguet 2, CH-2000 Neuchâtel, Switzerland
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Abstract

A set of samples grown under different substrate temperature has been characterised by complex optical, photoelectrical and transport measurements. A very sensitive and simple method for detection of optical scattering in a device quality amorphous silicon has been demonstrated. The spectral dependence of the optical scattering coefficient αs(E) can give us information on the nature and concentration of the scattering centers in a-Si:H thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 639
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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