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Optically Active Defects in an InAsP/InP Quantum Well Monolithically Integrated on SrTiO3 (001)

Published online by Cambridge University Press:  01 February 2011

Jun Cheng ,
Ahiram El Akra ,
Catherine Bru-Chevallier ,
Gilles Patriarche ,
Ludovic LARGEAU ,
Philippe Regreny ,
Guy Hollinger  and
Guillaume Saint-Girons
Jun Cheng
Affiliation:
Jun.cheng@ec-lyon.fr, Institut des Nanotechnologies de Lyon, ecully, France
Ahiram El Akra
Affiliation:
ahiram.el-akra@ec-lyon.fr, Institut des Nanotechnologies de Lyon, ecully, France
Catherine Bru-Chevallier
Affiliation:
catherine.bru-chevallier@insa-lyon.fr, Institut des Nanotechnologies de Lyon, ecully, France
Gilles Patriarche
Affiliation:
gilles.patriarche@lpn.cnrs.fr, Laboratoire de Photonique et de Nanostructures, Marcoussis, France
Ludovic LARGEAU
Affiliation:
Ludovic.Largeau@lpn.cnrs.fr, United States
Philippe Regreny
Affiliation:
Philippe.Regreny@ec-lyon.fr, Institut des Nanotechnologies de Lyon, ecully, France
Guy Hollinger
Affiliation:
guy.hollinger@ec-lyon.fr, United States
Guillaume Saint-Girons
Affiliation:
Guillaume.Saint-Girons@ec-lyon.fr, INL, Ecole Centrale de Lyon, Lyon, France
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Abstract

The optical properties of an InAsP/InP quantum well grown on a SrTiO3(001) substrate are analyzed. At 13K, the photoluminescence (PL) yield of the well is comparable to that of a reference well grown on an InP substrate. Increasing the temperature leads to the activation of non-radiative mechanisms for the sample grown on SrTiO3. The main non-radiative channel is related to the thermal excitation of the holes to the first heavy hole excited state, followed by the non-radiative recombination of the carriers on twins and/or domain boundaries, in the immediate vicinity of the well.

Keywords

crystal growthIII-Voptical properties

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