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Optimization of a Dual-Mode RF / Microwave Plasma for Amorphous thin film Deposition

Published online by Cambridge University Press:  16 February 2011

R. Etemadi ,
O. Leroy ,
B. Drevillon  and
C. Godet
R. Etemadi
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UPR 0258 CNRS), Ecole Polytechnique, 91128 Palaiseau-Cedex, France
O. Leroy
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UPR 0258 CNRS), Ecole Polytechnique, 91128 Palaiseau-Cedex, France
B. Drevillon
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UPR 0258 CNRS), Ecole Polytechnique, 91128 Palaiseau-Cedex, France
C. Godet
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UPR 0258 CNRS), Ecole Polytechnique, 91128 Palaiseau-Cedex, France
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Abstract

A new dual-plasma (surface wave-coupled microwave and capacitively-coupled radiofrequency) PECVD reactor for high growth rate of Amorphous insulating alloys is being developped. A high flexibility for thin film materials synthesis is expected, because the energy of the ion bombardment can be monitored independently from the microwave plasma chemistry. In situ diagnostics (Optical EMission Spectroscopy and Spectroscopie Ellipsometry) are used for the optimization of the dual-Mode plasma deposition of hydrogenated Amorphous silicon a-Si:H and silicon oxides a-SiOx:H (with 0 ≤ × ≤ 2). The growth of stoichiometric oxide at 3.3 nm / s has been achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 109
Copyright
Copyright © Materials Research Society 1994

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References

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