Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-30T01:06:53.519Z Has data issue: false hasContentIssue false
  • English
  • Français

ORDER-DISORDER TRANSITIONS IN STRAINED SEMICONDUCTOR SYSTEMS

Published online by Cambridge University Press:  28 February 2011

A. OURMAZD  and
J. C. BEAN
A. OURMAZD
Affiliation:
AT&T BELL LABORATORIES, HOLMDEL, NJ 07733
J. C. BEAN
Affiliation:
AT&T BELL LABORATORIES, MURRAY HILL, NJ 07974
Get access

Abstract

We describe the observation of a strain-induced order-disorder transition in the alloy layers of a GeSi/Si superlattice and discuss the possible implications of the transition for the opto-electronic properties of this important system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 377
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Srivastava, G.P., Martins, J.L. and Zunger, A., Phys. Rev. B, 31, 2561, (1985).Google Scholar
2. Kuan, T.S., Kuech, T.F., Wang, W.I. and Wilkie, E.L., Phys. Rev. Lett., 54, 201 (1985).CrossRefGoogle Scholar
3. Hansen, M., Constitution of Binary Alloys (McGraw-Hill, New York, 1958), 2nd ed., p.774.Google Scholar
4. Thurmound, C.D., J. Phys. Chem. 57, 827 (1953).Google Scholar
5. Hull, R., Gibson, J.M., Marcantonio, K.J., Bean, J.C. and People, R., Bull. Am. Phys. Soc. 30, 265 (1985).Google Scholar
6. Ourmazd, A. and Bean, J.C., Phys. Rev. Lett. 55,765 (1985).Google Scholar
7. Bean, J.C., Feldman, L.C., Fiory, A.T., Nakahara, S. and Robinson, I.K., L. Vac. Sci. Technol. A 2, 436 (1984).Google Scholar
8. Irani, R.S. and Cahn, R.W., J. Mater. Sci. 8, 1453 (1973).Google Scholar