Hostname: page-component-848d4c4894-m9kch Total loading time: 0 Render date: 2024-05-15T15:38:50.380Z Has data issue: false hasContentIssue false
  • English
  • Français

Parameters Affecting Light-Induced Excess Conductivity in Amorphous Silicon Doping-Modulated Multilayers

Published online by Cambridge University Press:  28 February 2011

F.-C. Su ,
S. Levine  and
P. E. Vanier
F.-C. Su
Affiliation:
Materials Science Engineering Department, State University of New York at Stony Brook, Stony Brook, NY 11794
S. Levine
Affiliation:
Materials Science Engineering Department, State University of New York at Stony Brook, Stony Brook, NY 11794
P. E. Vanier
Affiliation:
Division of Metallurgy and Materials Science, Brookhaven National Laboratory, Upton, NY 11973
Get access

Abstract

The phenomenon of light-induced excess conductivity (LEC) which occurs in a-Si:H npnp doping-modulated multilayers is found experimentally to be dependent on several different factors. The concentrations of the dopants in n-type and p-type layers affect the Fermi level position, the height of the barriers, and also the density of defects. These parameters are altered by different choices of inert gas diluent (Ar or He) and substrate temperature T. For a given set of deposition conditions, the LEC effect can be maximized by varying the layer thickness. With undiluted silane at T = 250 °C, the effect was relatively small, reaching a maximum in relatively thick layers (540 Å). The largest effects were obtained for films deposited from silane diluted in helium, using thinner (330 Å) layers. However, for films deposited from silane diluted in argon, thS magnitude of the effect and optimum layer thickness was intermediate (440 Å). When Ts was varied, a minimum in LEC was found near 200–250° C. The influence of Sinternal field was examined by using nini, pipi and npnp multilayers. The internal field is a necessary factor to observe a large LEC effect. A compensated film shows a small LEC effect.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 447
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kakalios, J. and Fritzsche, H., Phys. Rev. Lett. 53, 1602 (1984)CrossRefGoogle Scholar
2. Hundhausen, M. and Ley, L., Phys. Rev. B32, 6655 (1985)CrossRefGoogle Scholar
3. Agarwal, S. C. and Guha, S., Phys. Rev. B 32, 8469 (1985)CrossRefGoogle Scholar
4. Su, F.-C., Levine, S., Vanier, P. E. and Kampas, F. J., J. Appl. Phys. 59, 2168 (1986)CrossRefGoogle Scholar
5. Dohler, G. H., Kunzel, H. and Ploog, K., Phys. Rev. B25, 2616 (1982)CrossRefGoogle Scholar
6. Scott, B. A., Reimer, J. A. and Longeway, P. A., J. Appl. Phys. 54, 6853 (1983)CrossRefGoogle Scholar
7. Reimer, J. A., Vaughan, R. W. and Knights, J. C., Phys. Rev. B24, 3360 (1981)CrossRefGoogle Scholar
8. Marshall, J. M., Street, R. A. and Thompson, M. J., J. Non-Cryst. Solids 66, 175 (1984)CrossRefGoogle Scholar