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Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability

Published online by Cambridge University Press:  01 February 2011

Antonella Poggi ,
Francesco Moscatelli ,
Sandro Solmi  and
Roberta Nipoti
Antonella Poggi
Affiliation:
poggi@bo.imm.cnr.it, CNR-IMM, Bologna, Bologna, Italy
Francesco Moscatelli
Affiliation:
moscatelli@bo.imm.cnr.it, CNR-IMM, Bologna, Bologna, Italy
Sandro Solmi
Affiliation:
solmi@bo.imm.cnr.it, CNR-IMM, Bologna, Bologna, Italy
Roberta Nipoti
Affiliation:
nipoti@bo.imm.cnr.it, CNR-IMM, Bologna, Bologna, Italy
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Abstract

This study compares p-MOS capacitors fabricated on N+ implanted and on virgin 4H-SiC. The former sample have N at the SiO2/SiC interface, the latter have not. To investigate the presence of deep and shallow hole traps at the SiO2/SiC interface, high frequency and quasi-static capacitance voltage measurements under dark have been compared for bias sweeping from accumulation to depletion and from depletion to accumulation, the latter after white light illumination. The presence of N has an effect on the density of the shallow donor like traps but none effect on the deep ones. The positive charge trapped in the oxide and/or at the oxide interface after equivalent tunneling hole injection have been compared and are equivalent. Time dependent dielectric breakdown tests have been compared too. The oxide grown on N+implanted SiC broken at lower electric field.

Keywords

oxideelectrical propertiesN
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B09-01
Copyright
Copyright © Materials Research Society 2010

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References

1 Jamet, P., Dimitrijev, S., and Tanner, P., J. Appl. Phys. 90, 5058 (2001).Google Scholar
2 Chung, G. Y., Tin, C. C., Williams, J. R., McDonald, K., Chanana, R. K., Weller, R. A., Pantelides, S. T., Feldman, L. C., Holland, O. W., Das, M. K., and Palmur, J. W., IEEE Electron Device Lett. 22, 176 (2001).Google Scholar
3 Lipkin, L. A., Das, M. K., and Palmour, J. W., Mater, Sci. Forum 389–393, 985 (2002).Google Scholar
4 Pensl, G., Beljakowa, S., Frank, T., Gao, K., Speck, F., Seyller, T., Ley, L., Ciobanu, F., Afanas'ev, V., Stesmans, A., Kimoto, T., and Schöner, A., Phys. Suatus Solidi B 245, 1378 (2008).Google Scholar
5 Poggi, A., Moscatelli, F., Hijikata, Y., Solmi, S., and Nipoti, R., Microelectron. Eng. 84, 2804 (2007)Google Scholar
6 Moscatelli, F., Poggi, A., Solmi, S., and Nipoti, R., IEEE Trans. Electron Devices 55, 961 (2008).Google Scholar
7 Inoue, N., Kimoto, T., Yano, H., and Matsunami, H., Jpn. J. Appl. Phys. 36, L1430 (1997)Google Scholar
8 Chanana, R. K., McDonald, K., Ventra, M. Di, Pantelides, S. T., Feldman, L. F., Chung, G. Y., Tin, C. C., Williams, J. R., and Weller, R. A., Appl. Phys. Lett. 77, 2560 (2000).Google Scholar
9 Rozen, J., Dhar, S., Dixit, S. K., Afanase'ev, V. A., Roberts, F. O., Dang, H. L., Wang, S., Pantelides, S. T. Williams, J. R., and Feldman, L. C., J. Appl. Phys. 103, 124513 (2008).Google Scholar
10 Afanas'ev, V. V., and Stesmans, A., Appl. Phys. Lett. 77, 2024 (2000).Google Scholar