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Patch antennas utilizing semi-insulating SiC for monolithic integration of the antenna subsystem on a SiC chip

Published online by Cambridge University Press:  18 June 2014

Tutku Karacolak ,
Rooban V. K. G. Thirumalai ,
Erdem Topsakal  and
Yaroslav Koshka
Tutku Karacolak
Affiliation:
Electrical Engineering, School of Engineering and Computer Science, Washington State University Vancouver, 14204 NE Salmon Creek Ave., Vancouver, WA 98686.
Rooban V. K. G. Thirumalai
Affiliation:
Department of Electrical and Computer Engineering, Mississippi State University, 406 Hardy Road, Mississippi State, MS 39762
Erdem Topsakal
Affiliation:
Department of Electrical and Computer Engineering, Mississippi State University, 406 Hardy Road, Mississippi State, MS 39762
Yaroslav Koshka
Affiliation:
Department of Electrical and Computer Engineering, Mississippi State University, 406 Hardy Road, Mississippi State, MS 39762
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Abstract

Semi-insulating (SI) silicon carbide (SiC) was evaluated as a candidate material for dielectric substrate for patch antennas suitable for monolithic antenna integration on a SiC semiconductor chip. Computer simulations of the return loss were conducted to design microstrip patch antennas operating at 10 GHz. The antennas were fabricated using SI 4H-SiC substrates, with Ti-Pt-Au stacks for ground planes and patches. A good agreement between the experimental results and simulation was obtained. The radiation performance of the designed SiC based patch antennas was as good as that normally achieved from antennas fabricated using conventional RF materials such as FR4 and Rogers. The antennas had the gain around 2 dBi at 10 GHz, which is consistent with the conventional antennas of a similar size.

Keywords

semiconductinginsulatormicroelectronics
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1693: Symposium DD – Silicon Carbide–Materials, Processing and Devices , 2014 , mrss14-1693-dd06-09
Copyright
Copyright © Materials Research Society 2014 

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