Skip to main content

Pentagate Approach to Reduce the Line Edge Roughness Effects in Bulk Si Tri-gate Transistors

  • Mustafa B. Akbulut (a1), Helena Silva (a1) and Ali Gokirmak (a1)

Accumulated body [1] approach to mitigate the effects of line edge roughness on bulk silicon finFETs and tri-gate FETs is analyzed through 3D TCAD simulations. A side-gate surrounding the body portion of the FET is used to accumulate the body with majority carriers. This approach is predicted to reduce device-to-device variability due to line edge roughness by stronger accumulation of the body in the wider sections of the channel and confinement of the channel away from the edges.

Hide All
[1] Gokirmak A. and Tiwari S., “Accumulated body ultranarrow channel silicon transistor with extreme threshold voltage tunabilityAppl. Phys. Lett., vol. 91, pp. 243504, 2007.
[2] Asenov A., Kaya S. and Brown A. R., “Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness,” Electron Devices, IEEE Transactions on, vol. 50, pp. 12541260, 2003.
[3] Baravelli E., Dixit A., Rooyackers R., Jurczak M., Speciale N. and De Meyer K., “Impact of Line-Edge Roughness on FinFET Matching Performance,” Electron Devices, IEEE Transactions on, vol. 54, pp. 24662474, 2007.
[4] Fan M. L., Wu Y. S., Hu V. P., Hsieh C. Y., Su P. and Chuang C. T., “Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability—A Model-Based Approach,” Electron Devices, IEEE Transactions on, vol. 58, pp. 609616, 2011.
[5] Struck C. R. M., Neumann M. J., Raju R., Bristol R. L. and Ruzic D. N., “Grazing incidence ion beams for reducing LER,” in 2008, pp. 71402P.
[6] Bangsaruntip S., Cohen G. M., Majumdar A., Zhang Y., Engelmann S. U., Fuller N., Gignac L. M., Mittal S., Newbury J. S., Guillorn M., Barwicz T., Sekaric L., Frank M. M. and Sleight J. W., “High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling,” in Electron Devices Meeting (IEDM), 2009 IEEE International, 2009, pp. 14.
[7] Synopsys Inc., “Sentaurus TCAD User Manual,” 2011.
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *



Full text views

Total number of HTML views: 0
Total number of PDF views: 1 *
Loading metrics...

Abstract views

Total abstract views: 83 *
Loading metrics...

* Views captured on Cambridge Core between September 2016 - 22nd November 2017. This data will be updated every 24 hours.