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Persistent photocurrent effects in GaN/AlGaN multiquantum wells

Published online by Cambridge University Press:  21 March 2011

A. Bonfiglio ,
G. Traetta ,
M. Lomascolo ,
A. Passaseo  and
R. Cingolani
A. Bonfiglio
Affiliation:
Unita' INFM, Dept. Ingegneria Elettrica ed Elettronica, University of Cagliari, ITALY
G. Traetta
Affiliation:
Unita' INFM, Dept. Ingegneria dell'Innovazione, University of Lecce, ITALY
M. Lomascolo
Affiliation:
IME-CNR, Via Arnesano, I-73100, Lecce, ITALY
A. Passaseo
Affiliation:
Unita' INFM, Dept. Ingegneria dell'Innovazione, University of Lecce, ITALY
R. Cingolani
Affiliation:
Unita' INFM, Dept. Ingegneria dell'Innovazione, University of Lecce, ITALY
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Abstract

PhotoCurrent (PC) experiments on GaN/AlGaN multiple quantum wells, both spectrally and temporally resolved, have shown that a photopersistence effect exists in our samples even at room temperature. A peak in the rise and decay times of PC vs. time appears in correspondence of wavelengths typical of Yellow-Band features while this is not seen in PL. This fact seems to indicate that YB defects give rise here to carrier trapping rather than recombination. Furthermore, the observed persistence times seem to be peculiar of MultiQuantum Wells and this possibly calls into play the role of built-in fields in the defects dynamics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E4.10
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Chen, H. M., Chen, Y. F., Lee, M. C., and Feng, M. S., J. Appl. Phys., 82 899, (1997)Google Scholar
2. Reddy, C.V., Balakrishan, K., Okumura, H. and Yoshida, S., Appl. Phys. Lett., 73, 244, (1998)Google Scholar
3. Beadie, G., Rabinovich, W. S., Wickenden, A. E., Koleske, D. D., Binari, S. C., and Freitas, J. A. Jr, Appl. Phys. Lett., 71, 1092, (1997)Google Scholar
4. Hirsch, M.T., Wolk, J. A., Walukiewicz, W., and Haller, E. E., Appl. Phys. Lett., 71 (1997), 1098 Google Scholar
5. Li, G., Chua, S.J., Wang, W., Sol. State Commun., 111, 659, (1998)Google Scholar
6. Li, J. Z., Lin, J. Y., Jiang, H. X., Khan, M. Asif, and Chen, Q., J. Appl. Phys., 82 1227, (1997)Google Scholar
7. Lin, T. Y., Chen, H. M., Tsai, M. S., Chen, Y. F., Fang, F. F., Lin, C. F., and Chi, G. C., Phys. Rev. B58 13793, (1998)Google Scholar
8. Dang, X. Z., Wang, C. D., Yu, E. T., Boutros, K. S., and Redwing, J. M., Appl. Phys. Lett. 72 2745, (1998)Google Scholar
9. Bernardini, F., Fiorentini, V. and Vanderbilt, D., Phys. Rev. B56, R10024 (1997)Google Scholar
10. Bernardini, F., Fiorentini, V. and Vanderbilt, D., Phys. Rev. Lett. 79, 3958 (1997)Google Scholar
11. Bernardini, F. and Fiorentini, V., Phys. Rev. B57, Rapid Commun.B57 (16), 1, (1998);Google Scholar
12. Fiorentini, V., Bernardini, F., Sala, F. Della, Carlo, A. Di, and Lugli, P., Phys. Rev. B60, 8849 (1999).Google Scholar
13. Leroux, M., Grandjean, N., Laugt, M., Massies, J., Gil, B., Lefebvre, P., and Bigenwald, P., Phys. Rev. B58, R13371, (1998)Google Scholar
14. Bonfiglio, A., Lomascolo, M., Traetta, G., Cingolani, R., Carlo, A. Di, Sala, F. Della, Lugli, P., , Botchkarev, and Morkoc, H., J. of Appl. Phys. 87, 2289, (2000)Google Scholar
15. Qiu, C. H. and Pankove, J. I., Appl. Phys. Lett., 70, 1983 (1997)Google Scholar
16. Hacke, P., Detchprohm, T., Hiramatsu, K., Sawaki, N., Tadatomo, K., Miyake, K., J. Appl. Phys., 76, 304 (1994)Google Scholar
17. Goetz, W., Johnson, N.M., Amano, H., Akasaki, I., Appl. Phys. Lett., 65, 463 (1994)Google Scholar
18. Wang, C.D., Yu, L.S., Lau, S.S., Yu, E. T., Kim, W., Botchkarev, A.E., Morkoc, H., Appl. Phys. Lett., 72, 1211 (1998)Google Scholar
19. Hacke, P. and Okushi, H., Appl. Phys. Lett., 71, 524 (1997)Google Scholar
20. Klein, P. B., Freitas, J. A., Binari, S. C. and ickenden, A. E. W, Appl. Phys. Lett., 75, 4016 (1999)Google Scholar
21. Huang, Z. C., Mott, D. B., Shu, P. K., Zhang, R., Chen, J. C., Wickenden, D. K., J. Appl. Phys., 82, 2707 (1997)Google Scholar
22. Neugebauer, J. and Walle, C. G. Van de, Appl. Phys. Lett., 69, 503 (1996).Google Scholar