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Phase Change Memory with Chalcogenide Selector (PCMS): Characteristic Behaviors, Physical Models and Key Material Properties

  • Ilya V. Karpov (a1), David Kencke (a2), Derchang Kau (a3), Stephen Tang (a4) and Gianpalo Spadini (a5)...
Abstract

We present a novel scalable and stackable nonvolatile solid state memory. Each cell consists of a storage element, based on phase change memory (PCM) element, and an integrated selector, using an Ovonic threshold switch (OTS). The cell is implemented to enable a true cross-point array. The main device characteristics and behaviors, corresponding physical processes in different operation modes, and key material properties are discussed.

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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
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