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A Phase Diagram Approach for Predicting Reactions in Al/TiW(-Nitride) Thin-Film Systems

Published online by Cambridge University Press:  21 February 2011

A.S. Bhansali ,
I.J.M.M. Raaijmakers ,
R. Sinclair ,
A.E. Morgan ,
B.J. Burrow  and
M. Arst
A.S. Bhansali
Affiliation:
Dept. of Materials Science & Engineering, Stanford University, Stanford, CA 94305
I.J.M.M. Raaijmakers
Affiliation:
Philips Research and Development Center, Philips Components—Signetics, Sunnyvale, CA 94088.
R. Sinclair
Affiliation:
Dept. of Materials Science & Engineering, Stanford University, Stanford, CA 94305
A.E. Morgan
Affiliation:
Philips Research and Development Center, Philips Components—Signetics, Sunnyvale, CA 94088.
B.J. Burrow
Affiliation:
Philips Research and Development Center, Philips Components—Signetics, Sunnyvale, CA 94088.
M. Arst
Affiliation:
Philips Research and Development Center, Philips Components—Signetics, Sunnyvale, CA 94088.
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Abstract

A quaternary phase diagram for Ti–W–N–Al has been calculated from existing thermodynamic data, and is used to predict the Al/TiW-nitride reaction. The predicted reaction products-TiAl3, WAl5, WAl12, and AlN—were observed by XRD and TEM in annealed Al/TiW(-nitride) thin films. The sheet resistance of Al/TiW films increased by an order of magnitude at 550°C, whereas the increase in the case of the Al/TiW-nitride films was not even two-fold. The formation of an interfacial AlN layer was observed in the Al/TiW-nitride metallization. This AlN layer limits the interaction between Al and TiW-nitride, thus providing good thermal stability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 15
Copyright
Copyright © Materials Research Society 1990

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