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Phase Stability of Beta-gallia Rutile Intergrowths: (Ga,In)4(Sn,Ti)n-4O2n-2

Published online by Cambridge University Press:  11 February 2011

Malin Charoenwongsa  and
Doreen D. Edwards
Malin Charoenwongsa
Affiliation:
School of Ceramic Engineering and Material Science, Alfred University, Alfred, NY, 14802, U.S.A.
Doreen D. Edwards
Affiliation:
School of Ceramic Engineering and Material Science, Alfred University, Alfred, NY, 14802, U.S.A.
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Abstract

Beta-gallia-rutile (BGR) intergrowths possess one-dimensional tunnels that are suitable hosts for small-to-medium cations, thereby making them potential candidates for ion conductors, ion separators, battery electrodes, and chemical sensors. The BGR intergrowths are a series of homologous compounds expressed generically as Ga4Mn-4O2n-2, where n is an integer; and M is a tetravalent cation that forms a rutile-type oxide. In an attempt to identify materials with high tunnel densities and higher contents of a reducible M4+ cation, we are mapping the compositional stability regions of intergrowths expressed as Ga4–4xIn4xSn(n-4)(1-y)Ti(n-4)yO2n-2 where n = 6, 7 and 9 and 0.15 < x < 0.30 and 0 < y < 1.0. Polycrystalline samples were prepared by solid-state reaction at 1250 – 1400 °C and characterized by X-ray diffraction. Factors that affect phase stability are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 756: Symposia EE/FF – Solid-State Ionics – Materials for Fuel Cells and Fuel Processors , 2002 , EE3.12
Copyright
Copyright © Materials Research Society 2003

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References

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