Hostname: page-component-848d4c4894-75dct Total loading time: 0 Render date: 2024-05-15T13:57:33.298Z Has data issue: false hasContentIssue false
  • English
  • Français

Phase Transitions in Lead(II) Fluoride Upon Milling

Published online by Cambridge University Press:  10 February 2011

Georges DÉnÉ  and
M. Cecilia Madamba
Georges DÉnÉ
Affiliation:
Department of Chemistry and Biochemistry, Laboratory of Solid State Chemistry and Mössbauer Spectroscopy, Laboratories for Inorganic Materials, Concordia University, Montreal, Qudbec, H3G 1M8, Canada, gdenes@vax2.concordia.ca
M. Cecilia Madamba
Affiliation:
Department of Chemistry and Biochemistry, Laboratory of Solid State Chemistry and Mössbauer Spectroscopy, Laboratories for Inorganic Materials, Concordia University, Montreal, Qudbec, H3G 1M8, Canada, gdenes@vax2.concordia.ca
Get access

Abstract

PbF2 is known to exist under two different polymorphic structures. Orthorhombic α-PbF 2 is stable at ambient temperature. It has the PbC12 structure. Cubic β-PbF2 is obtained by heating α-PbF2. It does not transform back to α-PbF2 on cooling, and it seems to be infinitely stable in the metastable state under ambient conditions. β-PbF2 crystallizes in the fluorite (CaF2) type. Owing to the large number of potential interstitial sites, many F- Frenkel defects can be formed, which make β-PbF2 the highest performance fluoride ion conductor among binary fluorides. In this work, both phases of PbF2 have been ball milled. Milling α-PbF2 results in a partial transformation to microcrystalline β-PbF2. The energy required for obtaining the high temperature phase is probably provided in the mechanical form. Milling β-PbF2 leads to partial amorphization and formation of α-PbF2. In this case, milling transforms the high temperature polymorph to the low temperature form, by providing the energy required to overcome the activation energy that keeps PbF2 trapped in the high temperature β-form after cooling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 481: Symposium P – Science and Technology of Semiconductor Surface Preparation , 1997 , 673
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dénès, G., Mat. Res. Bull. 15, 807 (1980).Google Scholar
2. Pannetier, J., Dénès, G., Durand, M. and Buevoz, J. L., J. Physique 41, 1019 (1980).Google Scholar
3. Dénès, G., J. Solid State Chem. 37, 16 (1981).Google Scholar
4. Wyckoff, R. G. W., Crystal Structures, Vol.1, 2nd edition, Interscience, New York, 1963, pp.242 and 298–299.Google Scholar
5. Dénès, G. and Madamba, M. C., Materials Structure 3, 227 (1996).Google Scholar
6. Dénès, G., J. Solid State Chem. 77, 54 (1988).Google Scholar
7. Warren, B. E., X-ray Diffraction, 2nd edition, Dover Publications, New York, 1990, pp. 251–314.Google Scholar