Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-26T07:19:27.686Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoassisted Deposition of Silicon Dioxide from Silane and Nitrogen Dioxide

Published online by Cambridge University Press:  22 February 2011

Jeffrey Marks ,
Robert C. Bowman Jr  and
Ruby E. Robertson
Jeffrey Marks
Affiliation:
The Aerospace Corporation, Chemistry and Physics Laboratory, P.O. Box 92957, Los Angeles, CA 90009
Robert C. Bowman Jr
Affiliation:
The Aerospace Corporation, Chemistry and Physics Laboratory, P.O. Box 92957, Los Angeles, CA 90009
Ruby E. Robertson
Affiliation:
The Aerospace Corporation, Chemistry and Physics Laboratory, P.O. Box 92957, Los Angeles, CA 90009
Get access

Abstract

Three new reactions for depositing silicon dioxide at low temperatures using vacuum ultraviolet and ultraviolet radiation to initiate a reaction between silane and nitrogen dioxide have been developed. The optical and electrical properties of these films are reported. The effect of ion implantation on the infrared spectra of oxides grown by vacuum ultraviolet irradiation is also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 115
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Mattson, B., Solid State Technol., p. 60 (Jan. 1980).Google Scholar
2 Pai, P.G., Chao, S. S, Takagi, Y., and Lucovsky, G., J. Vac. Sci. Technol. A 4(3), 689 (1986).CrossRefGoogle Scholar
3 Bennett, B. R., Lorenzo, J. P., and Vaccaro, K., Appl. Phys. Lett. 50(4), 197 (1987).Google Scholar
4 Chen, J.Y., Henderson, R.C., Hall, J.T., and Peters, J.W., J. Electrochem. Soc. 131(9), 2146 (1984).Google Scholar
5 Boyer, P.K., Roche, G.A., Ritchie, W.H., and Collins, G.J., Appl. Phys. Lett. 40(8), 716 (1982).Google Scholar
6 Tarui, Y., Hidaka, J., Aota, K., Jpn. J. Appl. Phys. 23, L827 (1984).Google Scholar
7 Mishima, Y., Hirose, M., and Osaka, Y., J. Appl. Phys. 55(4), 1234 (1984).Google Scholar
8 Marks, J., and Robertson, R.E., submitted for publication Appl. Phys. Lett.Google Scholar
9 Lucovsky, G., Manitini, M.J., Srivastava, J.K. and Irene, E.A., J. Vac. Sci. Technol. B 5(2), 530 (1987).Google Scholar
10 Harada, Y., Murrell, J.N. and Sheena, H.H., Chem. Phys. Lett. 1, 595 (1968).Google Scholar
11 Herzberg, G., in Electronic Spectra and Electronic Structure of Polyatomic Molecules, Van Nostrand, New York, 1966.Google Scholar
12 Hampson, R.F., Jr. and Garvin, D., Reaction Rate and Photochemical Data for Atmospheric Chemistry, National Bureau of Standards, Washington, 1978.Google Scholar
13 EerNisse, E. P. and Norris, C.B., J. Appl. Phys. 45(12), 5196 (1974).Google Scholar