Hostname: page-component-857557d7f7-qr8hc Total loading time: 0 Render date: 2025-11-26T11:26:47.275Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoelectronic Properties of Low Temperature GaAs Grown on Silicon and GaAs Substrates by Mbe

Published online by Cambridge University Press:  28 February 2011

Raymond P. Mariella ,
Jeffrey D. Morse ,
Roger Aines  and
Charles E. Hunt
Raymond P. Mariella
Affiliation:
Lawrence Livermore National Laboratory, P. O. Box 808, Livermore, CA 94550
Jeffrey D. Morse
Affiliation:
Lawrence Livermore National Laboratory, P. O. Box 808, Livermore, CA 94550
Roger Aines
Affiliation:
Lawrence Livermore National Laboratory, P. O. Box 808, Livermore, CA 94550
Charles E. Hunt
Affiliation:
Department of Electrical Engineering, University of California, Davis, CA
Get access

Abstract

The characteristics of GaAs layers grown by MBE at growth temperatures from 200 °C to 400 °C have been evaluated by photoconductivity experiments in order to understand the photoelectronic properties of this material. Low temperature (LT) growth of GaAs on both silicon and GaAs substrates has been investigated in an attempt to better understand the nature of defects which are created in epitaxial layers grown under these conditions. Results from experiments on both annealed and unannealed LT samples indicate that the electronic transport properties of the epilayers can be controlled by selecting the appropriate growth conditions.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 325
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] Weber, E. R., Kaminska, M., Lilienthal-Weber, Z., Calawa, A. R. and F. W. Smith (unpublished).Google Scholar
[2] Smith, F. W., Calawa, A. R., Chen, Chang-Lee, Manfra, M. J. and Mahoney, L. J., IEEE Elect. Dev. Lett., vol. EDL–9, No. 2, pp 77–90, February, 1988.CrossRefGoogle Scholar
[3] Smith, F. W., Gupta, S., Le, H. Q., Frankel, M., Diadiuk, V., Hollis, M. A., Dykaar, D. R., Mourou, G. A., Hsiang, T. Y. and Calawa, A. R., Technical Digest, Picosecond Electronics and Optoelectronics Conference, Salt Lake City, Utah, pp 120–121, March 8-10, 1989.Google Scholar
[4] Johnson, A. M., Lum, R. M., Simpson, W. M. and Klingert, J., IEEE J. Quantum Elect., vol. QE–23, pp 1180–1184, July, 1987.CrossRefGoogle Scholar
[5] Auston, D. H. in Picosecond Optoelectronic Devices, edited by Lee, C. H. (Academic, Orlando, 1984), pp 73–117.CrossRefGoogle Scholar
[6] Lilienthal-Weber, Z., presented at the 1989 MRS Spring Meeting, San Diego, CA, 1989 (unpublished).Google Scholar
[7] Lilienthal-Weber, Z., Mariella, R., presented at the 1989 MRS Spring Meeting, San Diego, CA, 1989 (unpublished).Google Scholar